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    Single crystal tunnel devices
    1.
    发明授权
    Single crystal tunnel devices 失效
    单晶隧道装置

    公开(公告)号：US3816845A

    公开(公告)日：1974-06-11

    申请号：US18322571

    申请日：1971-09-23

    Applicant: IBM

    Inventor： CUOMO J ,  LAIBOWITZ R ,  MAYADAS A ,  ROSENBERG R

    IPC: H01L27/00 ,  H01L39/00 ,  H01L39/22 ,  H01L17/00

    CPC classification number: H01L39/223 ,  H01L27/00 ,  H01L27/18 ,  H01L39/228 ,  Y10S505/874

    Abstract: A tunneling device, or array of such devices, having at least one electrode which is a single crystal. Tunnel devices having two or more electrodes are shown, as are thin film Josephson devices having two single crystal electrodes. The electrodes of any device can be of the same or different material, and the crystallographic orientations of these electrodes can be the same or different. Although the tunnel barrier is usually an insulator, it can be other materials, or even a vacuum. In a particular embodiment, the barrier is an epitaxial layer. Both in-line and crossed-stripe geometries are used.

    Abstract translation: 具有至少一个电极是单晶的隧道装置或这种装置的阵列。 示出了具有两个或更多个电极的隧道装置，以及具有两个单晶电极的薄膜约瑟夫逊装置。 任何器件的电极可以是相同或不同的材料，并且这些电极的晶体取向可以相同或不同。 虽然隧道屏障通常是绝缘体，但它可以是其他材料，甚至是真空。 在特定实施例中，势垒是外延层。 使用在线和横条纹几何形状。

    Sputtering process for producing single crystal thin films
    2.
    发明授权
    Sputtering process for producing single crystal thin films 失效
    用于生产单晶薄膜的溅射工艺

    公开(公告)号：US3726776A

    公开(公告)日：1973-04-10

    申请号：US3726776D

    申请日：1969-06-30

    Applicant: IBM

    Inventor： ROSENBERG R ,  CUOMO J ,  MAYADAS A

    IPC: C30B23/08 ,  C23C14/40 ,  C30B23/06 ,  C23C15/00

    CPC classification number: C30B23/06 ,  Y10S505/816

    Abstract: A SPUTTERING PROCESS FOR DEPOSITING THIN, SINGLE CRYSTAL FILMS HAVING BULK PROPERTIES. THE PROCESS IS CHARACTERIZED BY AN EXTREMELY LOW PRE-SPUTTERING TIME, A SUBSTRATE BIAS OF AT LEAST APPROXIMATELY -30 VOLTS, AND LOW DEPOSITION TEMPERATURES. BOTH RF AND DC SPUTTERING ARE USED. IMPROVIDED THIN FILMS HAVING BULK PROPERTIES ARE PRODUCED. SAID THIN FILMS IN PARTICULAR BEING SUPERCONDUCTING MATERIALS, SUCH AS NIOBIUM. THE FILMS HAVE EXCELLENT CHEMICAL PURITY AND LOW DEFECT DENSITY, AND ARE SINGLE CRYSTALS.

    Fabrication mask using rare earth orthoferrites
    4.
    发明授权
    Fabrication mask using rare earth orthoferrites 失效
    制造面膜使用稀土金刚石

    公开(公告)号：US3816223A

    公开(公告)日：1974-06-11

    申请号：US21225171

    申请日：1971-12-27

    Applicant: IBM

    Inventor： AHN K ,  CUOMO J

    IPC: H01L21/027 ,  C23F1/00 ,  G03F1/54 ,  G02B5/22

    CPC classification number: G03F1/54 ,  Y10T428/24331 ,  Y10T428/24612 ,  Y10T428/265

    Abstract: A mask for the manufacture of semiconductor and various small components. Rare earth orthofertites, such as GdFeO3, as well as YFeO3, and LaFeO3 comprises the masking material. Rare earth combinations, such as (Gd, Eu) 1FeO3, can also be used for the masking material. This masking material is harder than the components being manufactured and is opaque to the wavelength used in photoresist techniques while being transparent to visible wavelengths over broad thickness ranges. The mask can comprise a patterned layer on a substrate or patterned bulk crystals having regions of different thickness. Substrates such as soda-lime glass, sapphire, quartz, etc. are suitable. The masking material can be deposited as large area films having good uniformity and good optical properties. The material is readily etched but is not attacked by materials used in photoresist processing. Its reflectivity is very low, thereby providing easy alignment and good image defination during use.

    Abstract translation: 用于制造半导体和各种小部件的面具。 稀土元素，如GdFeO3，以及YFeO3和LaFeO3都包括掩模材料。 稀土组合，如（Gd，Eu）1FeO3也可用于掩蔽材料。 该掩模材料比正在制造的组件更硬，并且对于在光致抗蚀剂技术中使用的波长是不透明的，同时对宽的厚度范围内的可见波长是透明的。 掩模可以包括在衬底上的图案化层或具有不同厚度的区域的图案化块状晶体。 基体如钠钙玻璃，蓝宝石，石英等都是合适的。 掩模材料可以沉积成具有良好均匀性和良好光学性能的大面积膜。 该材料易于蚀刻，但不受光致抗蚀剂加工中使用的材料的侵蚀。 其反射率非常低，从而在使用过程中提供了方便的对准和良好的图像定位。

    9.
    发明专利
    未知

    公开(公告)号：SE337580B

    公开(公告)日：1971-08-16

    申请号：SE40668

    申请日：1968-01-12

    Applicant: IBM

    Inventor： CUOMO J ,  GAMBINO R

    IPC: C01B19/00 ,  C01B25/06 ,  C01G11/00 ,  C01G13/00 ,  C09K11/70 ,  C22C1/00 ,  C25B1/00 ,  C30B9/14 ,  H01L21/00 ,  H01L21/208 ,  H05B33/14 ,  B01J17/00 ,  C25D3/56

    Abstract: 1,173,939. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 5 Oct., 1967 [13 Jan., 1967], No. 45427/67. Heading H1K. [Also in Division C7] A II-V, III-V and II-VI semi-conductor compound formed by a metal selected from Zn, Cd, Hg, Al, Ga, In and an element selected from P, As, Sb, S, Se, Te are prepared by cathodic deposition from a fused salt solution including ions of the chosen metal and element, the applied potential being sufficient to cause simultaneous deposition of the metal and element to form the desired compound. Preferably the constituent which is deposited in excess of its stoichiometric ratio in the compound is volatile at the temperature of the fused salt bath and is one of the Group V or Group VI elements. Typically the semi-conductor compound has the zinc blende structure and if desired it may be epitaxially deposited on a cathode formed by a single crystal of silicon. As described the fused bath includes alkali metal halides as diluent. The cell may comprise a tantalum crucible or quartz coated with graphite and serves also as anode while a graphite rod may serve as cathode. Germanium may also be used as a cathode. An inert cell atmosphere-argon, helium or nitrogen-is provided. The bath may also include compounds of dopants for the semiconductor which are codeposited with it. Examples are given of depositing crystals of GaP from baths containing Ga 2 O 3 and NaPO 3 ; A1P from baths containing Al 2 O 3 and NaPO 3 ; 8. of growing epitaxially on a Si crystal ZnSe from a bath containing ZnCl 2 and SeCl 4 . GaP doped with Zn is produced from a bath consisting of NaF, NaPO 3 , Ga 2 O 3 and ZnO and is deposited on a crystal of Si. Similarly by including also Na 2 SeO 4 in the bath, a photoluminescent GaP doped with both Zn and Se is obtained. By depositing first P-type GaP doped with Zn and then coating this with N-type GaP doped with Se, a PN junction is formed suitable for an electroluminescent diode which emits red light on the passage of current.

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