公开(公告)号：CA1290079C

公开(公告)日：1991-10-01

申请号：CA601597

申请日：1989-06-02

Applicant: IBM

Inventor： AKBAR SHAH ,  KROESEN PATRICIA L ,  OGURA SEIKI ,  ROVEDO NIVO

IPC: H01L29/73 ,  G03C3/00 ,  H01L21/331 ,  H01L29/08 ,  H01L29/10 ,  H01L29/732 ,  H01L29/737 ,  H01L29/72 ,  H01L29/52 ,  H01L29/60

Abstract: VERTICAL BIPOLAR TRANSISTOR A Compressed vertical bipolar transistor configuration that eliminates one side of the standard symmetrical base contact, while also eliminating the requirement for a collector contact reach-thru. The bipolar transistor comprises: a collector layer;a base layer disposed over the collector layer; an emitter layer disposed over the base layer; a first sidewall insulating layer disposed adjacent to and in contact with one side of the emitter layer, the base layer, and at least a portion of the collector layer; a second sidewall insulating layer disposed adjacent to and in contact with another side of the emitter layer and at least a portion of the base layer; and a base contact extension layer formed from heavily doped semiconductor material of the same conductivity type as the base layer, said base contact extension layer being in contact with and extending laterally from another side of the base layer. The structure further includes a base contact interconnect disposed on a surface of the base contact extension layer and; a collector contact extension layer formed from doped semiconductor material with the same conductivity type as the collector layer, with the collector contact extension layer being in contact with the collector layer and extending laterally from or below the one side thereof; and a collector contact interconnect disposed on a surface of the collector contact extension layer and separated from said emitter layer by only one or more insulating layers. FI9-87-027

公开(公告)号：BR8903812A

公开(公告)日：1990-03-20

申请号：BR8903812

申请日：1989-07-31

Applicant: IBM

Inventor： AKBAR SHAH ,  KROESEN PATRICIA LAVELLE ,  OGURA SEIKI ,  ROVEDO NIVO

IPC: H01L29/73 ,  G03C3/00 ,  H01L21/331 ,  H01L29/08 ,  H01L29/10 ,  H01L29/732 ,  H01L29/737 ,  H01L29/70

Abstract: A Compressed vertical bipolar transistor configuration that eliminates one side of the standard symmetrical base contact, while also eliminating the requirement for a collector contact reach-thru. The bipolar transistor comprises: a collector layer (12); a base layer (14) disposed over the collector layer; an emitter layer (16) disposed over the base layer; a first sidewall insulating layer (18) disposed adjacent to and in contact with one side of the emitter layer, the base layer, and at least a portion of the collector layer; a second sidewall insulating layer (20) disposed adjacent to and in contact with another side of the emitter layer and at least a portion of the base layer; and a base contact extension layer (22) formed from heavily doped semiconductor material of the same conductivity type as the base layer, said base contact extension layer being in contact with and extending laterally from another side of the base layer. The structure further includes a base contact interconnect (24) disposed on a surface of the base contact extension layer and; a collector contact extension layer (26) formed from doped semiconductor material with the same conductivity type as the collector layer, with the collector contact extension layer being in contact with the collector layer and extending laterally from or below the one side thereof; and a collector contact interconnect (29) disposed on a surface of the collector contact extension layer and separated from said emitter layer by only one or more insulating layers.

公开(公告)号：IN177966B

公开(公告)日：1997-03-01

申请号：IN615DE1990

申请日：1990-06-21

Applicant: IBM

Inventor： AKBAR SHAH ,  LAVELLE PATRICIA ,  ROVEDO NIVO

IPC: H01L27/00

公开(公告)号：DE68906095T2

公开(公告)日：1993-10-28

申请号：DE68906095

申请日：1989-06-29

Applicant: IBM

Inventor： AKBAR SHAH ,  KROESEN PATRICIA LAVELLE ,  OGURA SEIKI ,  ROVEDO NIVO

IPC: H01L29/73 ,  G03C3/00 ,  H01L21/331 ,  H01L29/08 ,  H01L29/10 ,  H01L29/732 ,  H01L29/737 ,  H01L29/72 ,  H01L29/52 ,  H01L29/60

Abstract: A Compressed vertical bipolar transistor configuration that eliminates one side of the standard symmetrical base contact, while also eliminating the requirement for a collector contact reach-thru. The bipolar transistor comprises: a collector layer (12); a base layer (14) disposed over the collector layer; an emitter layer (16) disposed over the base layer; a first sidewall insulating layer (18) disposed adjacent to and in contact with one side of the emitter layer, the base layer, and at least a portion of the collector layer; a second sidewall insulating layer (20) disposed adjacent to and in contact with another side of the emitter layer and at least a portion of the base layer; and a base contact extension layer (22) formed from heavily doped semiconductor material of the same conductivity type as the base layer, said base contact extension layer being in contact with and extending laterally from another side of the base layer. The structure further includes a base contact interconnect (24) disposed on a surface of the base contact extension layer and; a collector contact extension layer (26) formed from doped semiconductor material with the same conductivity type as the collector layer, with the collector contact extension layer being in contact with the collector layer and extending laterally from or below the one side thereof; and a collector contact interconnect (29) disposed on a surface of the collector contact extension layer and separated from said emitter layer by only one or more insulating layers.

公开(公告)号：DE68906095D1

公开(公告)日：1993-05-27

申请号：DE68906095

申请日：1989-06-29

Applicant: IBM

Inventor： AKBAR SHAH ,  KROESEN PATRICIA LAVELLE ,  OGURA SEIKI ,  ROVEDO NIVO

IPC: H01L29/73 ,  G03C3/00 ,  H01L21/331 ,  H01L29/08 ,  H01L29/10 ,  H01L29/732 ,  H01L29/737 ,  H01L29/72 ,  H01L29/52 ,  H01L29/60

Abstract: A Compressed vertical bipolar transistor configuration that eliminates one side of the standard symmetrical base contact, while also eliminating the requirement for a collector contact reach-thru. The bipolar transistor comprises: a collector layer (12); a base layer (14) disposed over the collector layer; an emitter layer (16) disposed over the base layer; a first sidewall insulating layer (18) disposed adjacent to and in contact with one side of the emitter layer, the base layer, and at least a portion of the collector layer; a second sidewall insulating layer (20) disposed adjacent to and in contact with another side of the emitter layer and at least a portion of the base layer; and a base contact extension layer (22) formed from heavily doped semiconductor material of the same conductivity type as the base layer, said base contact extension layer being in contact with and extending laterally from another side of the base layer. The structure further includes a base contact interconnect (24) disposed on a surface of the base contact extension layer and; a collector contact extension layer (26) formed from doped semiconductor material with the same conductivity type as the collector layer, with the collector contact extension layer being in contact with the collector layer and extending laterally from or below the one side thereof; and a collector contact interconnect (29) disposed on a surface of the collector contact extension layer and separated from said emitter layer by only one or more insulating layers.