公开(公告)号：JPS5151294A

公开(公告)日：1976-05-06

申请号：JP10311075

申请日：1975-08-27

Applicant: IBM

Inventor： ALBERTS GENE STODDARD ,  FARRAR PAUL ALDEN ,  HALLEN ROBERT LEE

IPC: G11C17/00 ,  G11C11/24 ,  G11C11/404 ,  H01L21/00 ,  H01L23/29 ,  H01L23/525 ,  H01L27/10

公开(公告)号：DE2534397A1

公开(公告)日：1976-04-22

申请号：DE2534397

申请日：1975-08-01

Applicant: IBM

Inventor： ALBERTS GENE STODDARD ,  FARRAR PAUL ALDEN ,  HALLEN ROBERT LEE

IPC: G11C17/00 ,  G11C11/24 ,  G11C11/404 ,  H01L21/00 ,  H01L23/29 ,  H01L23/525 ,  H01L27/10 ,  H01L21/90

Abstract: Disclosed is an improved method for manufacturing semiconductor integrated circuitry whereby interconnection pad limiting metallurgy and read only fusible link memory structure is simultaneously formed by first blank depositing a composite metal film followed by in situ forming pad metallurgy and said read only link structure utilizing photoresist and etch techniques. Said read only memory link structure is utilized for directing the use of redundant lines in place of defective array bits.

公开(公告)号：DE2227344A1

公开(公告)日：1973-01-11

申请号：DE2227344

申请日：1972-06-06

Applicant: IBM

Inventor： ALBERTS GENE STODDARD

IPC: G03F7/00 ,  G03F7/42 ,  H01L21/311 ,  H01L23/522 ,  H01L1/10