公开(公告)号：JPH1065031A

公开(公告)日：1998-03-06

申请号：JP16720197

申请日：1997-06-24

Applicant: IBM

Inventor： ALEKSANDR AKOBUITSUTSU ,  TAKU FUN NIN ,  PAUL MICHAEL SOLOMON

IPC: H01L21/8247 ,  H01L27/115 ,  H01L27/12 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device suitable for an electrically erasable and programmable read-only memory(EEPROM), an array of such device and a stacked array of such device. SOLUTION: An EEPROM device takes in a field-effect transistor and a control gate being spacing arranged on a first insulating layer, a second insulating layer formed on the field-effect transistor and the control gate and a common floating gate on the second insulating layer and on a channel of the field- effect transistor, accordingly this floating gate forms also a gate electrode of the field-effect transistor. This EEPROM device allows an interconnection inside a memory array and mutual overlapping of a plurality of memory arrays. Thereby, a problem at the time of forming an EEPROM array with high spatial density can be overcome by using a nonstandard silicon on insulator(SOI) CMOS process.