公开(公告)号：JP2000294796A

公开(公告)日：2000-10-20

申请号：JP2000065312

申请日：2000-03-09

Applicant: IBM

Inventor： ALESSANDRO G SCHROTT ,  JAMES A MISEVICH ,  BRUCE A SCOTT

IPC: H01L29/78 ,  H01L29/786 ,  H01L49/00

Abstract: PROBLEM TO BE SOLVED: To obtain a structure and a manufacturing method of a FET having a buried Mott insulating oxide channel. SOLUTION: A structure and a forming method of a field effect transistor having a buried Mott insulating oxide channel comprises the steps of depositing a source electrode and a drain electrode on a substrate 101, forming a Mott transition channel layer 201 on the substrate 101 and the electrodes, forming an insulator layer on the Mott transition channel layer 201, forming a source contact and a drain contact via the insulator layer (so that the source contact and the drain contact are electrically connected to the Mott transition channel layer), and forming a gate electrode 402 on the insulator layer between the source contact and the drain contact.