公开(公告)号：JP2000294796A

公开(公告)日：2000-10-20

申请号：JP2000065312

申请日：2000-03-09

Applicant: IBM

Inventor： ALESSANDRO G SCHROTT ,  JAMES A MISEVICH ,  BRUCE A SCOTT

IPC: H01L29/78 ,  H01L29/786 ,  H01L49/00

Abstract: PROBLEM TO BE SOLVED: To obtain a structure and a manufacturing method of a FET having a buried Mott insulating oxide channel. SOLUTION: A structure and a forming method of a field effect transistor having a buried Mott insulating oxide channel comprises the steps of depositing a source electrode and a drain electrode on a substrate 101, forming a Mott transition channel layer 201 on the substrate 101 and the electrodes, forming an insulator layer on the Mott transition channel layer 201, forming a source contact and a drain contact via the insulator layer (so that the source contact and the drain contact are electrically connected to the Mott transition channel layer), and forming a gate electrode 402 on the insulator layer between the source contact and the drain contact.

公开(公告)号：JP2000332133A

公开(公告)日：2000-11-30

申请号：JP2000131749

申请日：2000-04-28

Applicant: IBM

Inventor： JAMES A MAISUUICCHI ,  SCHROTT ALEJANDRO G ,  BRUCE A SCOTT

IPC: H01L29/12 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a complementary field-effect transistor structure having an oxide channel of a Mott material. SOLUTION: A method for manufacturing complementary field-effect transistor structure includes a step of forming a laminated structure having first and second sides. The first side has a first-type Mott channel layer 107 and the second side has a second-type Mott channel layer 106. A first source area 408 and a first drain area 409 are formed in the first side, and a second source area 302 and a second drain area 303 are formed in the second side. A first gate area 301 is formed in the second side and a second gate area 301 is formed in the first side. The first source, drain, and gate areas 408, 409, and 301 constitute a first-type field effect transistor, and the second source, drain, and gate areas 302, 303, and 412 constitute a second-type field effect transistor.