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公开(公告)号:JP2007194639A
公开(公告)日:2007-08-02
申请号:JP2007010824
申请日:2007-01-19
Applicant: Internatl Business Mach Corp
, インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation Inventor: DEBORAH ANNE NEWMEYER , STEPHEN MCCONELL GATES , VISHNUBHAI V PATEL , GRILL ALFRED , NGUYEN SON VAN , ALI AFZALI-ARDAKANI
IPC: H01L21/316
CPC classification number: H01L21/31695 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02348 , H01L21/02362 , H01L21/7682 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L23/5329 , H01L23/53295 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To provide SiCOH dielectrics and its manufacturing method. SOLUTION: There is provided a useful porous composite material in semiconductor device manufacturing in which the diameter (or the feature size) of a pore and pore size distribution (PSD) are controlled using a nanoscale and which shows an improved cohesive force (or which is the same with improved fracture toughness or improved brittleness) and increase in the power of resistance to the deterioration of the property of wafer such as stress corrosion cracking, Cu invasion, and other important property. The porous composite material is manufactured using at least one bifunctional organic pore source as a precursor compound. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 要解决的问题:提供SiCOH电介质及其制造方法。 解决方案:在半导体器件制造中提供了有用的多孔复合材料,其中使用纳米尺度控制孔和孔径分布(PSD)的直径(或特征尺寸)并且其显示出改善的内聚力( 或与改善的断裂韧性或脆性提高相同),耐腐蚀性能的提高,例如应力腐蚀开裂,Cu侵蚀等重要的特性。 使用至少一种双功能有机孔源作为前体化合物制造多孔复合材料。 版权所有(C)2007,JPO&INPIT
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公开(公告)号:GB2494021B
公开(公告)日:2017-01-25
申请号:GB201212327
申请日:2011-06-15
Applicant: IBM
Inventor: BINQUAN LUAN , GLENN JOHN MARTYNA , DENNIS NEWNS , STANISLAV POLONSKY , GUSTAVO ALEJANDRO STOLOVITZKY , HONGBO PENG , STEPHEN ROSSNAGEL , STEFAN HARRER , ALI AFZALI-ARDAKANI
IPC: B82Y15/00 , B01L3/00 , G01N33/487
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公开(公告)号:GB2496347B
公开(公告)日:2017-03-08
申请号:GB201303286
申请日:2011-06-07
Applicant: IBM
Inventor: AGEETH ANKE BOL , ALI AFZALI-ARDAKANI , GEORGE STOJAN TULEVSKI
Abstract: Techniques for increasing conductivity of graphene films by chemical doping are provided. In one aspect, a method for increasing conductivity of a graphene film includes the following steps. The graphene film is formed from one or more graphene sheets. The graphene sheets are exposed to a solution having a one-electron oxidant configured to dope the graphene sheets to increase a conductivity thereof, thereby increasing the overall conductivity of the film. The graphene film can be formed prior to the graphene sheets being exposed to the one-electron oxidant solution. Alternatively, the graphene sheets can be exposed to the one-electron oxidant solution prior to the graphene film being formed. A method of fabricating a transparent electrode on a photovoltaic device from a graphene film is also provided.
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公开(公告)号:RU2146686C1
公开(公告)日:2000-03-20
申请号:RU98107317
申请日:1996-09-12
Applicant: IBM
Inventor: ALI AFZALI-ARDAKANI , DZHEFFRI DONAL D GELORM , LAURA LUIZ KOZBAR
IPC: B32B27/16 , B32B27/18 , B32B27/00 , C08G59/40 , C08H3/00 , C08H6/00 , C08H7/00 , C08J5/04 , C08K3/00 , C08K5/1515 , C08K5/16 , C08L5/00 , C08L63/00 , C08L91/00 , C08L93/00 , C08L97/00 , C08L99/00 , H05K1/03 , C08H5/02
Abstract: FIELD: chemistry of polymers, more particularly printed circuits of biological origin using compositions and methods of forming structures. SUBSTANCE: structure comprises transversely cross-linked polymer comprising electric conductor prepared from renewable or biological source. EFFECT: better properties and improved working characteristics of the resulting materials and printed circuits. 15 cl, 13 dwg, 1 tbl
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