公开(公告)号：GB2577463A

公开(公告)日：2020-03-25

申请号：GB202000225

申请日：2018-06-14

Applicant: IBM

Inventor： KEVIN WAYNE BREW ,  DENNIS NEWNS ,  TALIA SIMCHA GERSHON ,  TEODOR KRASSIMIROV TODOROV ,  GLENN JOHN MARTYNA ,  SEYOUNG KIM

IPC: H01L45/00

Abstract: Memristive devices based on ion-transfer between two meta-stable phases in an ion intercalated material are provided. In one aspect, a memristive device is provided. The memristive device includes: a first inert metal contact; a layer of a phase separated material disposed on the first inert metal contact, wherein the phase separated material includes interstitial ions; and a second inert metal contact disposed on the layer of the phase separated material. The first phase of the phase separated material can have a different concentration of the interstitial ions from the second phase of the phase separated material such that the first phase of the phase separated material has a different electrical conductivity from the second phase of the phase separated material. A method for operating the present memristive device is also provided.

公开(公告)号：GB2577831A

公开(公告)日：2020-04-08

申请号：GB201918712

申请日：2018-06-01

Applicant: IBM

Inventor： KEVIN WAYNE BREW ,  DENNIS NEWNS ,  SEYOUNG KIM ,  TALIA SIMCHA GERSHON ,  TEODOR KRASSIMIROV TODOROV

IPC: H01L27/12

Abstract: A method of fabricating a memristive structure for symmetric modulation between resistance states is presented. The method includes forming a first electrode and a second electrode over an insulating substrate, forming an anode contacting the first and second electrodes, forming an ionic conductor over the anode, forming a cathode of the same material as the anode over the ionic conductor, forming a third electrode over the cathode, and enabling bidirectional transport of ions between the anode and cathode resulting in a resistance adjustment of the memristive structure, the anode and the cathode being formed from metastable mixed conducting materials with ion concentration dependent conductivity.

公开(公告)号：GB2577463B

公开(公告)日：2020-08-19

申请号：GB202000225

申请日：2018-06-14

Applicant: IBM

Inventor： KEVIN WAYNE BREW ,  DENNIS NEWNS ,  TALIA SIMCHA GERSHON ,  TEODOR KRASSIMIROV TODOROV ,  GLENN JOHN MARTYNA ,  SEYOUNG KIM

IPC: H01L45/00

Abstract: Memristive devices based on ion-transfer between two meta-stable phases in an ion intercalated material are provided. In one aspect, a memristive device is provided. The memristive device includes: a first inert metal contact; a layer of a phase separated material disposed on the first inert metal contact, wherein the phase separated material includes interstitial ions; and a second inert metal contact disposed on the layer of the phase separated material. The first phase of the phase separated material can have a different concentration of the interstitial ions from the second phase of the phase separated material such that the first phase of the phase separated material has a different electrical conductivity from the second phase of the phase separated material. A method for operating the present memristive device is also provided.

公开(公告)号：GB2494021B

公开(公告)日：2017-01-25

申请号：GB201212327

申请日：2011-06-15

Applicant: IBM

Inventor： BINQUAN LUAN ,  GLENN JOHN MARTYNA ,  DENNIS NEWNS ,  STANISLAV POLONSKY ,  GUSTAVO ALEJANDRO STOLOVITZKY ,  HONGBO PENG ,  STEPHEN ROSSNAGEL ,  STEFAN HARRER ,  ALI AFZALI-ARDAKANI

IPC: B82Y15/00 ,  B01L3/00 ,  G01N33/487

公开(公告)号：GB2577831B

公开(公告)日：2021-10-13

申请号：GB201918712

申请日：2018-06-01

Applicant: IBM

Inventor： KEVIN WAYNE BREW ,  DENNIS NEWNS ,  SEYOUNG KIM ,  TALIA SIMCHA GERSHON ,  TEODOR KRASSIMIROV TODOROV

IPC: H01L27/12

Abstract: A method of fabricating a memristive structure for symmetric modulation between resistance states is presented. The method includes forming a first electrode and a second electrode over an insulating substrate, forming an anode contacting the first and second electrodes, forming an ionic conductor over the anode, forming a cathode of the same material as the anode over the ionic conductor, forming a third electrode over the cathode, and enabling bidirectional transport of ions between the anode and cathode resulting in a resistance adjustment of the memristive structure, the anode and the cathode being formed from metastable mixed conducting materials with ion concentration dependent conductivity.

公开(公告)号：GB2573693A

公开(公告)日：2019-11-13

申请号：GB201910618

申请日：2018-01-03

Applicant: IBM

Inventor： TALIA SIMCHA GERSHON ,  KEVIN WAYNE BREW ,  SAURABH SINGH ,  DENNIS NEWNS

IPC: H01L45/00

Abstract: A memristive device includes a first conductive material layer. An oxide material layer is arranged on the first conductive layer. A second conductive material layer is arranged on the oxide material layer, where in the second conductive layer comprises a metal-alkali alloy.