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    Josephson tunneling circuits with superconducting contacts
    2.
    发明授权
    Josephson tunneling circuits with superconducting contacts 失效
    JOSEPHSON隧道电路与超级联系

    公开(公告)号：US3852795A

    公开(公告)日：1974-12-03

    申请号：US32078473

    申请日：1973-01-03

    Applicant: IBM

    Inventor： AMES I

    IPC: H01L39/02 ,  H01L39/22 ,  H01L9/00 ,  H01L3/00

    CPC classification number: H01L39/223 ,  H01L39/025 ,  Y10S505/874

    Abstract: A Josephson tunnelling circuit is fabricated by forming layers of insulation and superconducting metallization on a substrate. The layers form Josephson tunnelling junctions, superconducting lines, superconducting contacts and other elements which may be needed. Josephson tunnelling junctions are formed by three layers, a thin tunnelling oxide between two superconducting layers. Superconducting contacts are formed between either of the two superconducting layers and an overlying third superconducting layer. The latter layer includes a metal, preferably indium, which has a free energy of oxide formation which is at least as high - or higher - than the alloys forming the first and second layers.

    Abstract translation: 通过在衬底上形成绝缘和超导金属化层来制造约瑟夫森隧道电路。 这些层形成约瑟夫森隧道结，超导线，超导触点和可能需要的其他元件。 约瑟夫森隧道结由三层形成，即两层超导层之间的薄隧穿氧化层。 在两个超导层中的任一个和上覆的第三超导层之间形成超导触点。 后一层包括金属，优选铟，其具有与形成第一和第二层的合金至少高或更高的氧化物形成的自由能。

    3.
    发明专利
    未知

    公开(公告)号：BE744429A

    公开(公告)日：1970-07-14

    申请号：BE744429D

    申请日：1970-01-14

    Applicant: IBM

    Inventor： AMES I ,  HEURLE F M D ,  HORSTMANN R E

    IPC: H01L23/52 ,  H01B1/00 ,  H01B1/02 ,  H01L21/00 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/29 ,  H01L23/485 ,  H01L27/00 ,  H01L29/43 ,  H05K

    Abstract: This disclosure provides a copper doped aluminum conductive thin film stripe for use as a current-carrying member in a solid state microelectronic configuration which has substantial resistance against circuit failure due to damage caused by current-induced mass transport in the stripe. It has also been discovered for the practice of this invention that the addition of a relatively small amount of copper to an aluminum stripe together with a suitable heat-treatment enhances the extent of its lifetime during current conduction. Preferably, the percentage copper is from the neighborhood of 0.1 percent to the neighborhood of 10 percent by weight composition of copper in the aluminum and with an annealing heat-treatment in the approximate range of 250 DEG C to 560 DEG C. However, for certain operational conditions of the stripe a selected percent less than 54 percent copper by weight composition is advantageous.

    4.
    发明专利
    未知

    公开(公告)号：SE355475B

    公开(公告)日：1973-04-16

    申请号：SE39770

    申请日：1970-01-14

    Applicant: IBM

    Inventor： AMES I ,  D HEURLE F ,  HORSTMANN R

    IPC: H01B1/00 ,  H01B1/02 ,  H01L21/00 ,  H01L23/52 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/29 ,  H01L23/485 ,  H01L27/00 ,  H01L29/43 ,  H01L1/14 ,  H05K1/00 ,  H05K3/00

    Abstract: This disclosure provides a copper doped aluminum conductive thin film stripe for use as a current-carrying member in a solid state microelectronic configuration which has substantial resistance against circuit failure due to damage caused by current-induced mass transport in the stripe. It has also been discovered for the practice of this invention that the addition of a relatively small amount of copper to an aluminum stripe together with a suitable heat-treatment enhances the extent of its lifetime during current conduction. Preferably, the percentage copper is from the neighborhood of 0.1 percent to the neighborhood of 10 percent by weight composition of copper in the aluminum and with an annealing heat-treatment in the approximate range of 250 DEG C to 560 DEG C. However, for certain operational conditions of the stripe a selected percent less than 54 percent copper by weight composition is advantageous.

    COPPER FOPED ALUMINUM CONDUCTIVE STRIPES AND METHOD THEREFOR
    5.
    发明专利
    COPPER FOPED ALUMINUM CONDUCTIVE STRIPES AND METHOD THEREFOR 未知

    公开(公告)号：CA939077A

    公开(公告)日：1973-12-25

    申请号：CA71850

    申请日：1970-01-12

    Applicant: IBM

    Inventor： AMES I ,  D HEURLE F ,  HORSTMANN R

    IPC: H01L23/52 ,  H01B1/00 ,  H01B1/02 ,  H01L21/00 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/29 ,  H01L23/485 ,  H01L27/00 ,  H01L29/43

    Abstract: This disclosure provides a copper doped aluminum conductive thin film stripe for use as a current-carrying member in a solid state microelectronic configuration which has substantial resistance against circuit failure due to damage caused by current-induced mass transport in the stripe. It has also been discovered for the practice of this invention that the addition of a relatively small amount of copper to an aluminum stripe together with a suitable heat-treatment enhances the extent of its lifetime during current conduction. Preferably, the percentage copper is from the neighborhood of 0.1 percent to the neighborhood of 10 percent by weight composition of copper in the aluminum and with an annealing heat-treatment in the approximate range of 250 DEG C to 560 DEG C. However, for certain operational conditions of the stripe a selected percent less than 54 percent copper by weight composition is advantageous.

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