公开(公告)号：DE2059713A1

公开(公告)日：1971-06-09

申请号：DE2059713

申请日：1970-12-04

Applicant: IBM

Inventor： ARNOLD BOCHMANN RAYMOND ,  GUNTHER DESSAUER RALPH ,  PONG JEA DIAN

IPC: C30B15/14 ,  C30B15/22 ,  B01J17/18

Abstract: An improved method and apparatus for producing large diameter semiconductor crystals by the Czochralski process wherein a relatively flat temperature profile is maintained within the melt by adding heat to the sides and top of the melt while simultaneously removing heat from the melt through the crystal being pulled and the lower portion of the melt. In the apparatus, the temperature profile is maintained with a deflector to direct heat energy to the top surface of the melt about the crystal being pulled, a heat exchange element to facilitate removal of heat through the crystal being pulled, and means to remove heat through the lower portion of the crucible containing the melt.