公开(公告)号：DE2059713A1

公开(公告)日：1971-06-09

申请号：DE2059713

申请日：1970-12-04

Applicant: IBM

Inventor： ARNOLD BOCHMANN RAYMOND ,  GUNTHER DESSAUER RALPH ,  PONG JEA DIAN

IPC: C30B15/14 ,  C30B15/22 ,  B01J17/18

Abstract: An improved method and apparatus for producing large diameter semiconductor crystals by the Czochralski process wherein a relatively flat temperature profile is maintained within the melt by adding heat to the sides and top of the melt while simultaneously removing heat from the melt through the crystal being pulled and the lower portion of the melt. In the apparatus, the temperature profile is maintained with a deflector to direct heat energy to the top surface of the melt about the crystal being pulled, a heat exchange element to facilitate removal of heat through the crystal being pulled, and means to remove heat through the lower portion of the crucible containing the melt.

公开(公告)号：DE1964522A1

公开(公告)日：1970-07-09

申请号：DE1964522

申请日：1969-12-23

Applicant: IBM

Inventor： PETER DE SANTIS DOMINIC ,  GUNTHER DESSAUER RALPH ,  FRANCIS GOREY EDWARD ,  ROBERT POPONIAK MICHAEL ,  PAUL SCHNEIDER CHRISTIAN ,  AUGUST SCHUMANN JUN PAUL

IPC: G01R27/00 ,  G01N27/04 ,  G01R1/067 ,  G01R31/28 ,  H01L21/66 ,  G01R27/14

Abstract: 1294477 Measuring semi-conductor resistivity INTERNATIONAL BUSINESS MACHINES CORP 23 Dec 1969 [26 Dec 1968] 62507/69 Heading G1U [Also in Division H2] In order to determine the spreading resistance or apparent resistance, of a semi-conductor specimen, two probes are brought into contact with the specimen, a third, 'spreading resistance' probe is brought into contact with it thereafter (when non reproducible disturbances caused by the first two probes have ceased), a current of known magnitude is applied to the specimen via one of the first two probes and the third probe and the voltage between the other of the first two probes and the third probe is measured. The spreading resistance is determined in accordance with this voltage and the current. The specimen 31, which may be a semi-conduct- or wafer containing PN junctions wherein the spreading resistance of the several semi-conductor layers is to be determined, is supported on a base 32, which can be adjusted in two horizontal directions at right angles and in the vertical direction. The three probes 28, 29, and 30, 29 being the spreading resistance probe, are supported by probe arms 25, 26, 27 which can be relatively positioned by assemblies 18, 19, 20, have adjustable weighting and can be raised and lowered relative to the specimen by vertical shafts 80, 81, 82 The shafts are operable by a cam plate assembly 84, to lower the probes onto the specimen in the required sequence, the 'spreading resistance' probe being applied last to the specimen. The apparatus has a metal lid 140 which may be closed during a test to exclude light, stray fields and acoustic noises, and the adjustment control (71) have a lid which may be closed during a test to prevent accidental adjustment of the position of the specimen. To enable a specimen to be tested, the handle 123, which is locked to the cam plate, is rotated to lift the probes and latched against spring action. This allows the lids to be opened, and the specimen placed and adjusted. When push button 103 is operated the latch is released and the spring action rotates the cam plate against the action of a dashpot so that the probes are gradually lowered onto the specimen. The cam plate control arm actuates a microswitch 119 when the probes are fully lowered, to initiate a test sequence. The microswitch 119 operates a switch 121 to enable capacitor 157 to discharge through relay 159 This momentarily closes the contacts 161, 162 to complete the supply circuit via contacts 164, 144, (closed by closing the lid) to the motor 163, which drives the assembly of cams 167-175. The first of these, 167, maintains the contacts 161, 162 closed throughout a test. Cam 175 operates the contacts 190, 184 to reverse the current supply to probes 28, 29 in each quarter cycle of a test cycle. The contact 176 is operated during each quarter cycle to remove a short circuit from the current source 48 so that current can flow through the specimen in opposite directions in both half cycles. The switches 193, 196 are operated so that the digital voltmeter 46 is coupled across the potentiometer 187 whose resistance is standardised, to indicate current to the specimen in the first half cycle, and between the probes 29, 30 in the second half cycle, to indicate a voltage related to spreading resistance. The voltage measurements are taken for each direction of current flow and the mean value determined. The two measurements should be roughly the same. A switch 199 actuates the digital voltmeter at an appropriate time in each quarter cycle, while switch 204 similarly activates a coupler 202 to a card punch 203, operating at a different time to the voltmeter to avoid noise interaction Switch 213 alternatively activates lamps 211, 212 to show a test is proceeding. The spreading resistance is determined from the mean of the observed voltage and current values and is carried out for a number of specimen positions by adjusting the positioning control 71. It is said that provided the probe 30 is more than 10 times the diameter of the spreading resistance probe 29, 99% of the effective spreading resistance will be directly under the probe 29. The force applied by the probes must be sufficient to make good contact but not to penetrate the layer whose resistance is to be determined. The force may be adjusted for different materials by adjusting the probe weights.

公开(公告)号：DE1619774A1

公开(公告)日：1971-06-16

申请号：DE1619774

申请日：1967-06-30

Applicant: IBM

Inventor： GUNTHER DESSAUER RALPH

IPC: C30B15/28

Abstract: 1,143,325. Crystal - pulling. INTERNATIONAL BUSINESS MACHINES CORP. 19 May, 1967 [1 July, 1966], No. 23287/67. Heading B1S. In the pulling of a silicon crystal 20 from a melt 10 in a crucible 12 heated by a resistance coil 14, the height of the solid/liquid interface with respect to the resistance heater is maintained constant as pulling proceeds by raising crucible 12 by means of a buoyancy device comprising a float 32 connected to crucible 12 by a shaft 16. Float 32 floats in a liquid 34 in a tank 36 and is also supported by a flat coil constant force springs 40. Tank 36 is surrounded by a cooling water jacket 60. Crucible 12, shaft 16 and the buoyancy device are rotated by means 50. The upper limit of travel of shaft 16 is sensed by a device 65. The cross-sectional area of tank 36 may be varied by the addition or removal of rods 70.

公开(公告)号：DE1619967A1

公开(公告)日：1970-07-30

申请号：DE1619967

申请日：1967-02-15

Applicant: IBM

Inventor： GUNTHER DESSAUER RALPH ,  JOSEPH PATZNER EUGENE ,  ROBERT POPONIAK MICHAEL

IPC: C30B15/26 ,  H01L21/208 ,  H01J39/12

Abstract: 1,111,025. Crystal-pulling. INTERNATIONAL BUSINESS MACHINES CORPORATION. 22 Feb., 1967 [1 March, 1966], No. 8336/67- Heading B1S. [Also in Division G1] The growth conditions of a silicon crystal 20 are adjusted according to the output from a detector 30 sensing both visible light and infra-red radiation from the melt 10. Crystal pull, crucible rotation, crystal rotation, and crucible lift may be controlled, the last named in order to maintain constant the distance between the radiating surface and the detector. The detector may be movable for example by programme to monitor different points on the surface of the melt, monitoring of cooler points towards the periphery of the melt giving a larger crystal cross-section. The crucible is heated by an electrical resistance and covered by a belt jar into which impurities may be introduced. The surface may be viewed through polished fused quartz which may be kept free from deposits by a gas shield. Optimum viewing angles are discussed polarising attenuating discs being introduced as necessary in the radiation path. Control may be effected by a combination of a silicon controlled rectifier and a resetting magnetic amplifier. Suitable spectral bands and dimensions of field viewed are exemplified.