公开(公告)号：JPH06216472A

公开(公告)日：1994-08-05

申请号：JP29305293

申请日：1993-11-24

Applicant: IBM

Inventor： ATSUBASU BIFUAARATSUDO ,  MAAKU EDOUIN JIYOSUTO ,  KURISUTOFU ESU HAADAA

IPC: G02B6/122 ,  H01S5/00 ,  H01S5/22 ,  H01S5/343 ,  H01S3/18 ,  G02B6/12

Abstract: PURPOSE: To provide a semiconductor ridge waveguide laser structure with a ridge-roughened in a sidewall. CONSTITUTION: This structure includes a substrate and an activate layer 12 disposed between an upper clad layer 14 and a lower clad layer 16, and further contains a waveguide ridge 18 consisting of a contact layer 20 of the upper clad layer and a trapezoid ridge part 16. A sidewall 24 of the trapezoid ridge part is roughened to reduce a contact resistance value.