公开(公告)号：JPH06318764A

公开(公告)日：1994-11-15

申请号：JP2237694

申请日：1994-02-21

Applicant: IBM

Inventor： KURISUTOFU ESU HAADAA ,  SURIDAARU BUII IERU ,  HAINTSU PII MAIYAA ,  ARUFURETSUDO FUIRITSUPUSU JIYU ,  ATSUBAASU BEFUFUARU RAADO

IPC: G02B6/122 ,  H01P3/16 ,  H01S5/00 ,  H01S5/22 ,  H01S5/32 ,  H01S5/343 ,  H01S3/18 ,  G02B6/12

Abstract: PURPOSE: To provide an engineering method that controls a horizontal far visual field parameter of a semiconductor ridge laser by changing the Al differential concentration of upper and lower AlGaAs clad layer under a semiconductor laser vertical structure. CONSTITUTION: A board, a first or a lower sided clad layer 14 comprising AlGaAs on the board, an active layer 12 on the lower sided clad layer and a second or an upper sided clad layer 16 comprising AlGaAs on the active layer are included in laser structure. A semiconductor ridge wave guide laser having a high horizontal visual field value is provided. A raised ridge portion 22 formed by etching the upper sided clad layer by way of a mask is included in the upper clad layer. A contact layer 18 is bonded with the ridge portion. The aluminum/mole concentration of the lower sided clad layer is higher than the aluminum/mole concentration of the upper sided clad layer. This construction forces the optical mode to be directed toward the upper sided clad layer and increase the confinement of horizontal wave guide and produce a high horizontal visual field.

公开(公告)号：JPH06216472A

公开(公告)日：1994-08-05

申请号：JP29305293

申请日：1993-11-24

Applicant: IBM

Inventor： ATSUBASU BIFUAARATSUDO ,  MAAKU EDOUIN JIYOSUTO ,  KURISUTOFU ESU HAADAA

IPC: G02B6/122 ,  H01S5/00 ,  H01S5/22 ,  H01S5/343 ,  H01S3/18 ,  G02B6/12

Abstract: PURPOSE: To provide a semiconductor ridge waveguide laser structure with a ridge-roughened in a sidewall. CONSTITUTION: This structure includes a substrate and an activate layer 12 disposed between an upper clad layer 14 and a lower clad layer 16, and further contains a waveguide ridge 18 consisting of a contact layer 20 of the upper clad layer and a trapezoid ridge part 16. A sidewall 24 of the trapezoid ridge part is roughened to reduce a contact resistance value.