公开(公告)号：DE69022944D1

公开(公告)日：1995-11-16

申请号：DE69022944

申请日：1990-08-11

Applicant: IBM

Inventor： AUSTIN LARRY W ,  LINDE HAROLD G

IPC: H01L21/308 ,  H01L21/306

Abstract: An improved method for anisotropically etching the (100) crystallographic plane of silicon wafers involves immersing the wafers in an etching solution containing an aromatic compound having at least two adjacent hydroxyl groups and a polar functional group on the ring, an amine and water. A quality etch at an appreciably greater rate is achieved.

公开(公告)号：DE69022944T2

公开(公告)日：1996-05-30

申请号：DE69022944

申请日：1990-08-11

Applicant: IBM

Inventor： AUSTIN LARRY W ,  LINDE HAROLD G

IPC: H01L21/308 ,  H01L21/306

Abstract: An improved method for anisotropically etching the (100) crystallographic plane of silicon wafers involves immersing the wafers in an etching solution containing an aromatic compound having at least two adjacent hydroxyl groups and a polar functional group on the ring, an amine and water. A quality etch at an appreciably greater rate is achieved.