公开(公告)号：DE69031460T2

公开(公告)日：1998-03-26

申请号：DE69031460

申请日：1990-10-05

Applicant: IBM

Inventor： LINDE HAROLD G ,  PREVITI-KELLY ROSEMARY A

IPC: C09D183/08 ,  C09D183/00 ,  H01L21/312

Abstract: An improved insulating layer is formed by applying to a suitable substrate an organic solution, prepared by reacting a aminoalkoxysilane monomer, an arylalkoxysilane or arylsilazane monomer and water in a solvent, and then heating the coated substrate under conditions so as to evaporate the solvent and form a layer of cured ladder-type silsesquioxane copolymer. The insulating layer, which demonstrates excellent planarizing and thermal stability characteristics, in particularly useful in semiconductor device applications.

公开(公告)号：DE69118119T2

公开(公告)日：1996-10-02

申请号：DE69118119

申请日：1991-09-27

Applicant: IBM

Inventor： LINDE HAROLD G ,  PREVITI-KELLY ROSEMARY A

IPC: C08G73/10 ,  B32B15/08 ,  B32B15/088 ,  B32B37/00 ,  C08J5/12 ,  C09D183/04 ,  C09D183/08 ,  H01L21/312 ,  H05K1/03 ,  H05K3/38 ,  H05K3/46

Abstract: In order to improve the adhesion of a polyimide layer to an underlying metal surface, an organic solution which cures to a silsesquioxane copolymer is applied to the surface. The polyimide and the copolymer are formed during a simultaneous curing step.

公开(公告)号：DE69031460D1

公开(公告)日：1997-10-23

申请号：DE69031460

申请日：1990-10-05

Applicant: IBM

Inventor： LINDE HAROLD G ,  PREVITI-KELLY ROSEMARY A

IPC: C09D183/08 ,  C09D183/00 ,  H01L21/312

Abstract: An improved insulating layer is formed by applying to a suitable substrate an organic solution, prepared by reacting a aminoalkoxysilane monomer, an arylalkoxysilane or arylsilazane monomer and water in a solvent, and then heating the coated substrate under conditions so as to evaporate the solvent and form a layer of cured ladder-type silsesquioxane copolymer. The insulating layer, which demonstrates excellent planarizing and thermal stability characteristics, in particularly useful in semiconductor device applications.

公开(公告)号：DE69022944D1

公开(公告)日：1995-11-16

申请号：DE69022944

申请日：1990-08-11

Applicant: IBM

Inventor： AUSTIN LARRY W ,  LINDE HAROLD G

IPC: H01L21/308 ,  H01L21/306

Abstract: An improved method for anisotropically etching the (100) crystallographic plane of silicon wafers involves immersing the wafers in an etching solution containing an aromatic compound having at least two adjacent hydroxyl groups and a polar functional group on the ring, an amine and water. A quality etch at an appreciably greater rate is achieved.

公开(公告)号：DE68919573T2

公开(公告)日：1995-05-24

申请号：DE68919573

申请日：1989-07-03

Applicant: IBM

Inventor： GLEASON ROBERT T ,  LINDE HAROLD G

IPC: G03F7/004 ,  G03F7/022 ,  G03F7/075 ,  G03F7/16 ,  G03F7/26 ,  G03F7/38 ,  H01L21/027

公开(公告)号：DE69023874D1

公开(公告)日：1996-01-11

申请号：DE69023874

申请日：1990-08-29

Applicant: IBM

Inventor： LINDE HAROLD G

IPC: G03F7/26 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  G03F7/40

公开(公告)号：DE68919573D1

公开(公告)日：1995-01-12

申请号：DE68919573

申请日：1989-07-03

Applicant: IBM

Inventor： GLEASON ROBERT T ,  LINDE HAROLD G

IPC: G03F7/004 ,  G03F7/022 ,  G03F7/075 ,  G03F7/16 ,  G03F7/26 ,  G03F7/38 ,  H01L21/027

公开(公告)号：CA2051174C

公开(公告)日：1994-05-31

申请号：CA2051174

申请日：1991-09-11

Applicant: IBM

Inventor： LINDE HAROLD G ,  PREVITI-KELLY ROSEMARY A

IPC: C08G73/10 ,  B32B15/08 ,  B32B15/088 ,  B32B37/00 ,  C08J5/12 ,  C09D183/04 ,  C09D183/08 ,  H01L21/312 ,  H05K1/03 ,  H05K3/38 ,  H05K3/46 ,  B32B27/06 ,  H01L23/29 ,  H01L21/469

Abstract: In order to improve the adhesion of a polyimide layer to an underlying metal surface, an organic solution which cures to a silsesquioxane copolymer is applied to the surface. The polyimide and the copolymer are formed during a simultaneous curing step.

公开(公告)号：DE69023874T2

公开(公告)日：1996-06-20

申请号：DE69023874

申请日：1990-08-29

Applicant: IBM

Inventor： LINDE HAROLD G

IPC: G03F7/26 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  G03F7/40

公开(公告)号：DE69022944T2

公开(公告)日：1996-05-30

申请号：DE69022944

申请日：1990-08-11

Applicant: IBM

Inventor： AUSTIN LARRY W ,  LINDE HAROLD G

IPC: H01L21/308 ,  H01L21/306

Abstract: An improved method for anisotropically etching the (100) crystallographic plane of silicon wafers involves immersing the wafers in an etching solution containing an aromatic compound having at least two adjacent hydroxyl groups and a polar functional group on the ring, an amine and water. A quality etch at an appreciably greater rate is achieved.