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公开(公告)号:AU6314190A
公开(公告)日:1991-04-11
申请号:AU6314190
申请日:1990-09-24
Applicant: IBM
Inventor: AUSTIN LARRY WILBUR , LINDE HAROLD GEORGE
IPC: H01L21/308 , H01L21/306 , C09K13/00
Abstract: An improved method for anisotropically etching the (100) crystallographic plane of silicon wafers involves immersing the wafers in an etching solution containing an aromatic compound having at least two adjacent hydroxyl groups and a polar functional group on the ring, an amine and water. A quality etch at an appreciably greater rate is achieved.