公开(公告)号：DE3771004D1

公开(公告)日：1991-08-01

申请号：DE3771004

申请日：1987-04-24

Applicant: IBM

Inventor： LINDE HAROLD GEORGE ,  MURPHY ELIZABETH THERESA

IPC: G03C1/74 ,  G03F7/075 ,  G03F7/11 ,  G03F7/16 ,  H05K3/38 ,  G03F7/085

公开(公告)号：DE3770791D1

公开(公告)日：1991-07-18

申请号：DE3770791

申请日：1987-12-15

Applicant: IBM

Inventor： LINDE HAROLD GEORGE ,  MURPHY ELIZABETH THERESA ,  POLEY DENIS JOHN

IPC: C08J11/04 ,  C08J11/00 ,  C09D9/00 ,  H01L21/56 ,  H05K3/28 ,  C11D7/32 ,  C11D7/34 ,  C11D7/50

Abstract: The cleaning compositions of the present invention comprise pyridine or substituted pyridines alone or in admixture with sulfoxides. The present invention is employed to treat integrated circuit modules enclosed in a cap or can. Following treatment the cap or can, which is sealed to the substrate by means of the cured epoxy, can be removed to allow rework. The preferred method of removing the cured epoxy from module substrates is by refluxing in the solution. The cured epoxy is totally removed and there is no attack of the Al-Cu or Sn-Pb metallurgies or chip polyimide passivation. The silicone overcoat material is not removed from behind the chips, eliminating the need to reapply the material after rework.

公开(公告)号：DE68926143D1

公开(公告)日：1996-05-09

申请号：DE68926143

申请日：1989-09-16

Applicant: IBM

Inventor： BRUCE JAMES ALLEN ,  KERBAUGH MICHAEL LYNN ,  KWONG RANEE WAI-LING ,  LEE TANYA NINA ,  LINDE HAROLD GEORGE ,  SACHDEV HARBANS SINGH ,  SACHDEV KRISHNA GANDHI

IPC: H01L21/302 ,  G03F7/09 ,  G03F7/40 ,  H01L21/027 ,  H01L21/3065

Abstract: The structure comprises a pattern of a cured polymeric material deposited onto a substrate, said polymeric material having at least one fluorine-containing functional group and of an overlying silylated photoresist material. For forming a structure on a substrate utilizing photolithographic techniques a layer of polymeric material containing a fluorine-containing compound is applied over the substrate and cured. A layer of photoresist material is applied over the polymeric material, imagewise exposed and developed to reveal the image on the underlying polymeric material. Thereafter, the photoresist is silylated, and the then present structure is reactive ion etched to transfer the pattern down to the underlying substrate. The fluorine component provides that the structure or the pattern and the underlying substrate respectively are free of residue and cracking.

公开(公告)号：DE3469631D1

公开(公告)日：1988-04-07

申请号：DE3469631

申请日：1984-12-27

Applicant: IBM

Inventor： LINDE HAROLD GEORGE ,  MACINTYRE MICHAEL WILFORD ,  MOTSIFF WILLIAM THOMAS

IPC: C08G73/00 ,  C08G73/10 ,  H01B3/30 ,  H01L21/312 ,  H01L23/29 ,  H01L23/31

Abstract: A polyamic acid copolymer forming a polyimide comprising, in mole percent, from 5 to 45 percent pyromellitic dianhydride, from 5 to 45 percent oxydiphthalic dianhydride, and about 50 percent of oxydianiline is disclosed. Polyimides formed by curing the copolymer are also disclosed as is a process for forming a heat sealable coating on or dielectric isolation layer within electronic circuitry using the copolymer.

公开(公告)号：DE68926143T2

公开(公告)日：1996-10-24

申请号：DE68926143

申请日：1989-09-16

Applicant: IBM

Inventor： BRUCE JAMES ALLEN ,  KERBAUGH MICHAEL LYNN ,  KWONG RANEE WAI-LING ,  LEE TANYA NINA ,  LINDE HAROLD GEORGE ,  SACHDEV HARBANS SINGH ,  SACHDEV KRISHNA GANDHI

IPC: H01L21/302 ,  G03F7/09 ,  G03F7/40 ,  H01L21/027 ,  H01L21/3065

Abstract: The structure comprises a pattern of a cured polymeric material deposited onto a substrate, said polymeric material having at least one fluorine-containing functional group and of an overlying silylated photoresist material. For forming a structure on a substrate utilizing photolithographic techniques a layer of polymeric material containing a fluorine-containing compound is applied over the substrate and cured. A layer of photoresist material is applied over the polymeric material, imagewise exposed and developed to reveal the image on the underlying polymeric material. Thereafter, the photoresist is silylated, and the then present structure is reactive ion etched to transfer the pattern down to the underlying substrate. The fluorine component provides that the structure or the pattern and the underlying substrate respectively are free of residue and cracking.

公开(公告)号：AU6314190A

公开(公告)日：1991-04-11

申请号：AU6314190

申请日：1990-09-24

Applicant: IBM

Inventor： AUSTIN LARRY WILBUR ,  LINDE HAROLD GEORGE

IPC: H01L21/308 ,  H01L21/306 ,  C09K13/00

Abstract: An improved method for anisotropically etching the (100) crystallographic plane of silicon wafers involves immersing the wafers in an etching solution containing an aromatic compound having at least two adjacent hydroxyl groups and a polar functional group on the ring, an amine and water. A quality etch at an appreciably greater rate is achieved.