公开(公告)号：US3869324A

公开(公告)日：1975-03-04

申请号：US42942073

申请日：1973-12-28

Applicant: IBM

Inventor： BASI JAGTAR SINGH ,  MENDEL ERIC

IPC: B24B37/00 ,  C23F1/00 ,  H01L21/304 ,  H01L21/461 ,  H01L7/50

CPC classification number: H01L21/461

Abstract: Cadmium telluride with damage-free surfaces is obtained by chemically-mechanically polishing using a chemical polishing system including a stable, water soluble alkali metal or alkaline earth metal hypohalite and an alkali metal carbonate; the alkali metal carbonate must be present in at least equimolar proportions to the hypohalite.

Abstract translation: 具有无损伤表面的碲化镉通过使用包括稳定的水溶性碱金属或碱土金属次卤酸盐和碱金属碳酸盐的化学抛光系统进行化学机械抛光而获得; 碱金属碳酸盐必须以至少等摩尔的比例存在于次卤酸盐中。

公开(公告)号：US3869323A

公开(公告)日：1975-03-04

申请号：US42924073

申请日：1973-12-28

Applicant: IBM

Inventor： BASI JAGTAR SINGH

IPC: B24B37/00 ,  C23F1/00 ,  H01L21/304 ,  H01L21/461 ,  H01L7/50

CPC classification number: H01L21/461

Abstract: Zinc selenide with damage-free surfaces is obtained by chemically-mechanically polishing using a chemical polishing system including a water soluble alkali or alkaline earth metal hypohalite.

Abstract translation: 具有无损伤表面的硒化锌通过使用包括水溶性碱金属或碱土金属次卤酸盐的化学抛光系统进行化学机械抛光获得。

公开(公告)号：DE2257047A1

公开(公告)日：1973-06-07

申请号：DE2257047

申请日：1972-11-21

Applicant: IBM

Inventor： BASI JAGTAR SINGH ,  LYONS VINCENT JAMES

IPC: H01L21/22 ,  C30B31/06 ,  C30B31/16 ,  B01J17/34

Abstract: 1412438 Semiconductor diffusion INTERNATIONAL BUSINESS MACHINES CORP 22 Nov 1972 [2 Dec 1971] 54044/72 Heading H1K Zinc is diffused into a GaAs substrate in an evacuated container at a temperature between 800‹ and 1000‹ C. (e.g. 900‹ C.) in the presence of a two-phase system of Si and As to attain controllable shallow diffused regions. The Si-As system contains SiAs in the solid solution, and may comprise 2 to 50 (preferably 2À8) atomic per cent. As; it may be prepared as described in Specification 1,292,374. The dopant source may be Zn; ZnAs 2 ; Ga-Zn alloy; mixtures of Zn and As; ZnAs 2 and As; GaAs, ZnAs, and ZnAs 2 ; or preferably a homogenized mixture of Zu and GaAs. The substrate may be doped with Sn to a concentration of 1-3 x 10 18 atoms/cc.

公开(公告)号：DE2532902A1

公开(公告)日：1976-04-01

申请号：DE2532902

申请日：1975-07-23

Applicant: IBM

Inventor： BASI JAGTAR SINGH

IPC: H01L21/308 ,  C23F1/46 ,  H01L21/00 ,  H01L21/302

Abstract: Copper contaminants are removed from silicon with a solution containing copper (II) complexes. The solution may be recycled after use by bubbling oxygen through it.

公开(公告)号：DE2252045A1

公开(公告)日：1973-05-03

申请号：DE2252045

申请日：1972-10-24

Applicant: IBM

Inventor： BASI JAGTAR SINGH

IPC: B24B37/00 ,  H01L21/306 ,  H01L21/308 ,  H01L7/00

Abstract: An improved method for polishing gallium phosphide planar surfaces is disclosed comprising positioning gallium phosphide wafers or slices in close adjacency to a polishing medium providing a relative motion between said wafer and polishing medium while providing a controlled predetermined flow of OBr ions to said wafers and polishing medium and continuing the relative motion until the wafer surface is polished to a smooth and featureless condition whereupon the wafers are washed and removed from the polishing mechanism.

公开(公告)号：DE2249142A1

公开(公告)日：1973-04-19

申请号：DE2249142

申请日：1972-10-06

Applicant: IBM

Inventor： BASI JAGTAR SINGH

IPC: B24B37/00 ,  H01L21/304 ,  H01L21/306 ,  C23F3/00

公开(公告)号：DE2861075D1

公开(公告)日：1981-12-03

申请号：DE2861075

申请日：1978-07-10

Applicant: IBM

Inventor： BASI JAGTAR SINGH

IPC: H01L21/308 ,  C23G1/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/302 ,  C09K13/04

公开(公告)号：DE2820608A1

公开(公告)日：1978-11-30

申请号：DE2820608

申请日：1978-05-11

Applicant: IBM

Inventor： BASI JAGTAR SINGH

IPC: H01L21/308 ,  H01L21/304 ,  H01L21/306 ,  H01L21/302

公开(公告)号：DE2441352A1

公开(公告)日：1975-07-10

申请号：DE2441352

申请日：1974-08-29

Applicant: IBM

Inventor： BASI JAGTAR SINGH

IPC: B24B37/00 ,  C23F1/00 ,  H01L21/304 ,  H01L21/461 ,  H01L21/302

Abstract: Zinc selenide with damage-free surfaces is obtained by chemically-mechanically polishing using a chemical polishing system including a water soluble alkali or alkaline earth metal hypohalite.

公开(公告)号：DE3473845D1

公开(公告)日：1988-10-13

申请号：DE3473845

申请日：1984-02-22

Applicant: IBM

Inventor： BASI JAGTAR SINGH ,  MENDEL ERIC

IPC: C23F1/00 ,  B24B1/00 ,  B24B37/00 ,  C04B41/80 ,  C09K3/14 ,  C23F3/00 ,  B24B37/04

Abstract: The method comprises the chemical-mechanical polishing of titanium carbide containing surfaces to a high degree of perfection. The titanium carbide containing surfaces are continuously wetted with a water slurry containing a soft abrasive material. The continuously wiping of the titanium carbide surface is accomplished with a firm surface (16) using pressure while maintaining a relative movement between the titanium carbide containing surface and the firm surface (16) to remove the water reacted titanium carbide product from the high points of the titanium carbide containing surface. This method is continued until a high degree of perfection of the surface is accomplished. The slurry is typically composed of colloidal silicon dioxide dispersed in water. The titanium carbide surface can also include aluminum oxide as a constituent. Where aluminum oxide is present it is preferred to have about 60 to 80% aluminum oxide and 40 to 20% titanium carbide by weight in the surface structure.