公开(公告)号：US3662501A

公开(公告)日：1972-05-16

申请号：US3662501D

申请日：1971-01-28

Applicant: IBM

Inventor： MENDEL ERIC

IPC: B24B1/00 ,  C09K3/14

CPC classification number: B24B1/00 ,  C09K3/14

Abstract: This invention relates to a method of polishing magnetic oxides or bubble crystal surfaces to a featureless and strain-free condition. The method comprises pre-polishing or lapping with a suspension of polycrystalline garnets to a conchoidal condition followed by final polishing with a zirconium oxide slurry under polishing pressure between 2 and 40 psi.

Abstract translation: 本发明涉及一种将磁性氧化物或气泡晶体表面抛光到无特征和无应变条件的方法。 该方法包括将多晶石榴石的悬浮液预先研磨或研磨至贝壳状态，然后在抛光压力为2至40psi之间用氧化锆浆料进行最终抛光。

公开(公告)号：US3869324A

公开(公告)日：1975-03-04

申请号：US42942073

申请日：1973-12-28

Applicant: IBM

Inventor： BASI JAGTAR SINGH ,  MENDEL ERIC

IPC: B24B37/00 ,  C23F1/00 ,  H01L21/304 ,  H01L21/461 ,  H01L7/50

CPC classification number: H01L21/461

Abstract: Cadmium telluride with damage-free surfaces is obtained by chemically-mechanically polishing using a chemical polishing system including a stable, water soluble alkali metal or alkaline earth metal hypohalite and an alkali metal carbonate; the alkali metal carbonate must be present in at least equimolar proportions to the hypohalite.

Abstract translation: 具有无损伤表面的碲化镉通过使用包括稳定的水溶性碱金属或碱土金属次卤酸盐和碱金属碳酸盐的化学抛光系统进行化学机械抛光而获得; 碱金属碳酸盐必须以至少等摩尔的比例存在于次卤酸盐中。

公开(公告)号：US3662500A

公开(公告)日：1972-05-16

申请号：US3662500D

申请日：1971-01-28

Applicant: IBM

Inventor： MENDEL ERIC

IPC: B24B1/00 ,  C09K3/14

CPC classification number: B24B1/00 ,  C09K3/14

Abstract: This invention relates to a method of polishing magnetic oxides or bubble crystal surfaces to a featureless and strain-free condition. The method comprises pre-polishing or lapping with a suspension of polycrystalline garnets to a conchoidal condition followed by final polishing with a silicon dioxide alkaline slurry under polishing pressure not in excess of about 20 psi.

Abstract translation: 本发明涉及一种将磁性氧化物或气泡晶体表面抛光到无特征和无应变条件的方法。 该方法包括将多晶石榴石的悬浮液预先抛光或研磨至贝壳状态，然后在不超过约20p​​si的抛光压力下用二氧化硅碱性浆料进行最终抛光。

公开(公告)号：JPS62101034A

公开(公告)日：1987-05-11

申请号：JP19302286

申请日：1986-08-20

Applicant: IBM

Inventor： BEYER KLAUS DIETRICH ,  MAKRIS JAMES STEVE ,  MENDEL ERIC ,  NUMMY KAREN ANN ,  OGURA SEIKI ,  RISEMAN JACOB ,  ROVEDO NIVO

IPC: H01L21/76 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/74 ,  H01L21/762 ,  H01L21/763

公开(公告)号：DE3473845D1

公开(公告)日：1988-10-13

申请号：DE3473845

申请日：1984-02-22

Applicant: IBM

Inventor： BASI JAGTAR SINGH ,  MENDEL ERIC

IPC: C23F1/00 ,  B24B1/00 ,  B24B37/00 ,  C04B41/80 ,  C09K3/14 ,  C23F3/00 ,  B24B37/04

Abstract: The method comprises the chemical-mechanical polishing of titanium carbide containing surfaces to a high degree of perfection. The titanium carbide containing surfaces are continuously wetted with a water slurry containing a soft abrasive material. The continuously wiping of the titanium carbide surface is accomplished with a firm surface (16) using pressure while maintaining a relative movement between the titanium carbide containing surface and the firm surface (16) to remove the water reacted titanium carbide product from the high points of the titanium carbide containing surface. This method is continued until a high degree of perfection of the surface is accomplished. The slurry is typically composed of colloidal silicon dioxide dispersed in water. The titanium carbide surface can also include aluminum oxide as a constituent. Where aluminum oxide is present it is preferred to have about 60 to 80% aluminum oxide and 40 to 20% titanium carbide by weight in the surface structure.

公开(公告)号：CA1213076A

公开(公告)日：1986-10-21

申请号：CA484098

申请日：1985-06-14

Applicant: IBM

Inventor： HAUSE JAMES R ,  MENDEL ERIC

IPC: H01L21/304 ,  H01L21/306 ,  H01L29/06 ,  H01L27/00

Abstract: Improved Wafer Shape and Method of Making Same A semiconductor wafer shape which when subjected to a simultaneous polishing of both wafer surfaces produces a wafer of superior flatness and surface finish, the said wafer having a diametral cross-sectional shape like that of a "dogbone" wherein the wafer is thinner in its medial region than it is in the peripheral region and has rounded edges, this shape resulting from a chemical thinning operation.

公开(公告)号：CA1245517A

公开(公告)日：1988-11-29

申请号：CA509373

申请日：1986-05-16

Applicant: IBM

Inventor： BEYER KLAUS D ,  GUTHRIE WILLIAM L ,  MAKAREWICZ STANLEY R ,  MENDEL ERIC ,  PATRICK WILLIAM J ,  PERRY KATHLEEN A ,  PLISKIN WILLIAM A ,  RISEMAN JACOB ,  SCHAIBLE PAUL M ,  STANDLEY CHARLES L

IPC: H01L21/3205 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/306

Abstract: A method is disclosed for producing coplanar metal/insulator films on a substrate according to a chem-mech polishing technique. In one example, a substrate having a patterned insulating layer of dielectric material thereon, is coated with a layer of metal. The substrate is then placed in a parallel polisher and the metal is removed elsewhere except in the holes where it is left intact. This is made possible through the use of an improved selective slurry which removes the metal much faster than the dielectric material. The insulating layer may then be used as an automatic etch stop barrier. In a second example a substrate having a paterned metallic layer is coated with an insulating layer and then subjected to chem-mech polishing. The structure is coplanarized by the chem-mech removal of the insulating material from the high points of the structure at a faster rate than from the lower points. Optional etch stop layers also may be used.

公开(公告)号：DE3681696D1

公开(公告)日：1991-10-31

申请号：DE3681696

申请日：1986-07-29

Applicant: IBM

Inventor： BEYER KLAUS DIETRICH ,  MAKRIS JAMES STEVE ,  MENDEL ERIC ,  NUMMY KAREN ANN ,  OGURA SEIKI ,  RISEMAN JACOB ,  ROVEDO NIVO

IPC: H01L21/76 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/74 ,  H01L21/762 ,  H01L21/763

Abstract: A chemical-mechanical (chem-mech) method for removing SiO₂ protuberances at the surface of a silicon chip, such protuberances including "bird heads". A thin etch stop layer of Si₃N₄ (29) is deposited onto the wafer surface, which is then chem-mech polished with a SiO₂ water based slurry. The Si₃N₄ acts as a polishing or etch stop barrier layer only on the planar portions of the wafer surface. The portions of the Si₃N₄ layer located on the top and at the sidewalls of the "bird' heads" and the underlying SiO₂ protuberances are removed to provide a substantially planar integrated structure.

公开(公告)号：CA1273274A

公开(公告)日：1990-08-28

申请号：CA508583

申请日：1986-05-07

Applicant: IBM

Inventor： BEYER KLAUS D ,  MAKRIS JAMES S ,  MENDEL ERIC ,  NUMMY KAREN A ,  OGURA SEIKI ,  RISEMAN JACOB ,  ROVEDO NIVO

IPC: H01L21/76 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/74 ,  H01L21/762 ,  H01L21/763 ,  H01L21/205

Abstract: A chemical-mechanical (chem-mech) method for removing SiO2 protuberances at the surface of a silicon chip, such protuberances including "bird heads". A thin etch stop layer of Si3N4 is deposited onto the wafer surface, which is then chem-mech polished with a SiO2 water based slurry. The Si3N4 acts as a polishing or etch stop barrier layer only on the planar portions of the wafer surface. The portions of the Si3N4 layer located on the top and at the sidewalls of the "bird' heads" and the underlying SiO2 protuberances are removed to provide a substantially planar integrated structure.

公开(公告)号：CA1106611A

公开(公告)日：1981-08-11

申请号：CA331675

申请日：1979-07-12

Applicant: IBM

Inventor： BASI JAGTAR S ,  LYONS VINCENT J ,  MENDEL ERIC

IPC: B24B37/00 ,  B24D13/14 ,  B24B29/00

Abstract: PROCESS AND APPARATUS FOR FREE POLISHING Opposite faces of a workpiece, such as a semiconductor wafer, are simultaneously free polished by contacting the faces with a pair of rotating polishing pads to which are fed a polishing slurry of an abrasive material. A pattern of perforations is provided in the surface of at least one of the pads such that the area of pad in contact with the opposite faces of the workpiece is different. FI 9-78-031