公开(公告)号：FR2356328A1

公开(公告)日：1978-01-20

申请号：FR7619832

申请日：1976-06-24

Applicant: IBM FRANCE

Inventor： BEAUDOUIN P ,  DEBORD P

IPC: A61B6/03 ,  H04N1/401 ,  H04N5/217 ,  H04N3/14 ,  H04N1/04

Abstract: A noise reduction scheme for a photosensitive self scan system includes an array of photosensitive elements producing video signals and first and second pluralities of switching elements, one element of each of the pluralities of switching elements being connected to one photosensitive element of the array. A first video line connects each element of the first plurality of switching elements to a first input terminal of a summing device such as a differential amplifier and a second video line connects each element of the second plurality of switching elements to a second input terminal of the differential amplifier. Shift register means operated by clock pulses is provided to control the operation of each of the elements of the first plurality of switching elements to sequentially couple the photosensitive elements to the first input terminal and to apply periodically only clock pulse noise signals through the gate drain capacitance of the second plurality of switching elements to the second input terminal of the differential amplifier, so as to produce at the output of the amplifier a video signal substantially free of noise signals created by the clock pulses.

公开(公告)号：SE349424B

公开(公告)日：1972-09-25

申请号：SE3470

申请日：1970-01-02

Applicant: IBM

Inventor： BEAUDOUIN P ,  RISEMAN J ,  GLANG R

IPC: H01L29/43 ,  H01L21/00 ,  H01L21/28 ,  H01L23/485 ,  H01L23/522 ,  H01L1/14

Abstract: 1,269,130. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 17 Nov., 1969 [3 Jan., 1969], No. 56104/69. Heading H1K. Ohmic contact to a semi-conductor body is made within an aperture in a surface insulating layer by a layer of silicon monoxide-chromium cermet overcoated with a metal layer. A silicon or germanium body may be provided with an apertured coating of a silicon oxide, nitride, or oxide-nitride, or of a silicate glass. The cermet is applied to the entire surface at a substrate temperature of 100-500‹C. by flash evaporation of a sintered mixture of its two components or by coevaporation of the two components from separate sources. The chromium content of the cermet may be 50-90 atomic per cent. Without breaking vacuum, a layer of copper, silver or gold is applied and may be followed by a flashed layer of chromium or titanium. After selective etching to leave a contact and track pattern (resistors are formed in the pattern by the removal of the metallic layers to leave the cermet only), the system is baked for 1 hour at 300- 500‹ C. to effect diffusion of cermet components into the semi-conductor. A single- or multiplelayer insulation is applied and apertures formed at terminal areas. Further interconnection levels may be provided.