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    Magnetic element, memory device and write head
    2.
    发明专利
    Magnetic element, memory device and write head 未知

    公开(公告)号：AU8798501A

    公开(公告)日：2002-04-29

    申请号：AU8798501

    申请日：2001-09-26

    Applicant: IBM

    Inventor： ALLENSPACH ROLF ,  BEDNORZ GEORG ,  MEIJER INGMAR

    IPC: G11B5/00 ,  G11B5/127 ,  G11B5/245 ,  G11B5/31 ,  G11B5/49 ,  G11C11/16 ,  H01F10/32

    Abstract: A ferromagnetic pinned layer (1) kept at a fixed magnetic orientation by a pinning layer (4) is separated from a ferromagnetic free layer (3) by a Mott insulator coupling layer (2). A controllable voltage source (5) is connected between the pinned layer (1) and the free layer (3). A sublayer of the coupling layer (2) whose width (d) increases with the voltage is converted to an electrically conducting and magnetically coupling metallic state. The magnetic exchange field acting on the free layer (3) which is controlled by the applied voltage via the width (d) of the electrically conducting sublayer of the coupling layer (2) can be used to switch the free layer (3) between states of parallel and antiparallel orientations with respect to the magnetic orientation of the pinned layer (1). This is used in memory cells and in a write head.

    3.
    发明专利
    未知

    公开(公告)号：DE60113136T2

    公开(公告)日：2006-03-30

    申请号：DE60113136

    申请日：2001-09-26

    Applicant: IBM

    Inventor： ALLENSPACH ROLF ,  BEDNORZ GEORG ,  MEIJER INGMAR

    IPC: H01F10/32 ,  G11B5/00 ,  G11B5/127 ,  G11B5/245 ,  G11B5/31 ,  G11B5/49 ,  G11C11/16

    Abstract: A ferromagnetic pinned layer (1) kept at a fixed magnetic orientation by a pinning layer (4) is separated from a ferromagnetic free layer (3) by a Mott insulator coupling layer (2). A controllable voltage source (5) is connected between the pinned layer (1) and the free layer (3). A sublayer of the coupling layer (2) whose width (d) increases with the voltage is converted to an electrically conducting and magnetically coupling metallic state. The magnetic exchange field acting on the free layer (3) which is controlled by the applied voltage via the width (d) of the electrically conducting sublayer of the coupling layer (2) can be used to switch the free layer (3) between states of parallel and antiparallel orientations with respect to the magnetic orientation of the pinned layer (1). This is used in memory cells and in a write head.

    4.
    发明专利
    未知

    公开(公告)号：DE60113136D1

    公开(公告)日：2005-10-06

    申请号：DE60113136

    申请日：2001-09-26

    Applicant: IBM

    Inventor： ALLENSPACH ROLF ,  BEDNORZ GEORG ,  MEIJER INGMAR

    IPC: G11B5/00 ,  G11B5/127 ,  G11B5/245 ,  G11B5/31 ,  G11B5/49 ,  G11C11/16 ,  H01F10/32

    Abstract: A ferromagnetic pinned layer (1) kept at a fixed magnetic orientation by a pinning layer (4) is separated from a ferromagnetic free layer (3) by a Mott insulator coupling layer (2). A controllable voltage source (5) is connected between the pinned layer (1) and the free layer (3). A sublayer of the coupling layer (2) whose width (d) increases with the voltage is converted to an electrically conducting and magnetically coupling metallic state. The magnetic exchange field acting on the free layer (3) which is controlled by the applied voltage via the width (d) of the electrically conducting sublayer of the coupling layer (2) can be used to switch the free layer (3) between states of parallel and antiparallel orientations with respect to the magnetic orientation of the pinned layer (1). This is used in memory cells and in a write head.

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