公开(公告)号：DE69411493D1

公开(公告)日：1998-08-13

申请号：DE69411493

申请日：1994-09-23

Applicant: IBM

Inventor： BEHFAR-RAD ABBAS ,  MEIER HEINZ PETER ,  HARDER CHRISTOPH STEPHEN

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/16 ,  H01S5/20 ,  H01S5/22 ,  H01S5/32 ,  H01S5/34 ,  H01S3/085 ,  H01S3/19

Abstract: Making a semiconductor laser having at least a quantum well structure including layers deposited on a semiconductor substrate comprises: (a) forming one the substrate a set of laser layers of a base chemical compsn. and including at least a substitutional element, the laser layers including at least a lower cladding layer having a first concn. value of the substitutional element and a lower graded layer having a chemical compsn. varying from a second concn. value of the substitutional element a% a lower interface of the lower graded layer to a third concn. value of the substitutional element at an upper interface of the lower graded layer; (b) forming an upper graded layer on the quantum well layer; (c) forming an upper graded layer on the quantum well layer of a chemical compsn. having a concn. value of the substitutional element varying from a fifth concn. value at a lower interface of the upper graded layer with the quantum well layer to a sixth concn. value at an upper interface of the upper graded layer; (d) depositing an upper cladding layer of a seventh concn. value of the substitutional element above the upper graded layer and a contact layer of an eighth concn. value above the upper cladding layer; (e) sepg. a laser structure including an active area from a remainder portion of the substrate, thereby forming the semiconductor laser.

公开(公告)号：DE69411493T2

公开(公告)日：1999-03-04

申请号：DE69411493

申请日：1994-09-23

Applicant: IBM

Inventor： BEHFAR-RAD ABBAS ,  MEIER HEINZ PETER ,  HARDER CHRISTOPH STEPHEN

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/16 ,  H01S5/20 ,  H01S5/22 ,  H01S5/32 ,  H01S5/34 ,  H01S3/085 ,  H01S3/19

Abstract: Making a semiconductor laser having at least a quantum well structure including layers deposited on a semiconductor substrate comprises: (a) forming one the substrate a set of laser layers of a base chemical compsn. and including at least a substitutional element, the laser layers including at least a lower cladding layer having a first concn. value of the substitutional element and a lower graded layer having a chemical compsn. varying from a second concn. value of the substitutional element a% a lower interface of the lower graded layer to a third concn. value of the substitutional element at an upper interface of the lower graded layer; (b) forming an upper graded layer on the quantum well layer; (c) forming an upper graded layer on the quantum well layer of a chemical compsn. having a concn. value of the substitutional element varying from a fifth concn. value at a lower interface of the upper graded layer with the quantum well layer to a sixth concn. value at an upper interface of the upper graded layer; (d) depositing an upper cladding layer of a seventh concn. value of the substitutional element above the upper graded layer and a contact layer of an eighth concn. value above the upper cladding layer; (e) sepg. a laser structure including an active area from a remainder portion of the substrate, thereby forming the semiconductor laser.