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    Apparatus and method for producing blue-green light radiation
    1.
    发明专利
    Apparatus and method for producing blue-green light radiation 未知

    公开(公告)号：HK203896A

    公开(公告)日：1996-11-15

    申请号：HK203896

    申请日：1996-11-07

    Applicant: IBM

    Inventor： HARDER CHRISTOPH STEPHAN ,  LENTH WILFRIED ,  MEIER HEINZ PETER ,  RISK WILLIAM PAUL

    IPC: G02F1/35 ,  G02F1/355 ,  G02F1/361 ,  G02F1/37 ,  H01S3/109 ,  H01S5/00 ,  H01S5/0687 ,  H01S5/40 ,  H01S3/133

    Abstract: Apparatus and method for producing coherent blue-green-light radiation having a wavelength of essentially 490-500 nm. A diode laser (10), such as a strained-layer InGaAs/GaAs diode laser, provides a 980-1,000 nm beam (12), and a nonlinear crystal (19) of KTP (KTiOPO4) produces coherent radiation (22) by noncritically phase-matched second-harmonic generation (SHG) of said beam. The beam preferably has a wavelength of essentially 994 nm for generating radiation having a wavelength of essentially 497 nm. The crystal is disposed within an optical resonator (18) and the frequency of the laser is locked to that of the resonator. Alternatively, two diode lasers (10,11) are oriented to provide orthogonally polarized beams each with a wavelength of 980-1,000 nm but within essentially 1 nm of each other, and the KTP crystal is oriented with its a and c axes parallel to the orthogonally polarized beams. The KTP crystal may have an associated optical waveguide along which the beam is propagated to enhance SHG efficiency.

    MINIATURE BLUE-GREEN LASER SOURCE USING SECOND-HARMONIC GENERATION
    2.
    发明专利
    MINIATURE BLUE-GREEN LASER SOURCE USING SECOND-HARMONIC GENERATION 未知

    公开(公告)号：AU626964B2

    公开(公告)日：1992-08-13

    申请号：AU4778690

    申请日：1990-01-08

    Applicant: IBM

    Inventor： HARDER CHRISTOPH STEPHAN ,  RISK WILLIAM PAUL ,  MEIER HEINZ PETER ,  LENTH WILFRIED

    IPC: G02F1/35 ,  G02F1/355 ,  G02F1/361 ,  G02F1/37 ,  H01S3/109 ,  H01S5/00 ,  H01S5/0687 ,  H01S5/40 ,  H01S3/30

    Abstract: Apparatus and method for producing coherent blue-green-light radiation having a wavelength of essentially 490-500 nm. A diode laser (10), such as a strained-layer InGaAs/GaAs diode laser, provides a 980-1,000 nm beam (12), and a nonlinear crystal (19) of KTP (KTiOPO4) produces coherent radiation (22) by noncritically phase-matched second-harmonic generation (SHG) of said beam. The beam preferably has a wavelength of essentially 994 nm for generating radiation having a wavelength of essentially 497 nm. The crystal is disposed within an optical resonator (18) and the frequency of the laser is locked to that of the resonator. Alternatively, two diode lasers (10,11) are oriented to provide orthogonally polarized beams each with a wavelength of 980-1,000 nm but within essentially 1 nm of each other, and the KTP crystal is oriented with its a and c axes parallel to the orthogonally polarized beams. The KTP crystal may have an associated optical waveguide along which the beam is propagated to enhance SHG efficiency.

    3.
    发明专利
    未知

    公开(公告)号：DE3681164D1

    公开(公告)日：1991-10-02

    申请号：DE3681164

    申请日：1986-06-18

    Applicant: IBM

    Inventor： MEIER HEINZ PETER ,  HARDER CHRISTOPH STEPHAN

    IPC: G02F1/17 ,  G02F1/015 ,  G02F1/017 ,  H01S3/08

    Abstract: Optoelectronic voltage-controlled modulator for the external modulation of a light beam comprises: semiconductor substrate (31); reflector (33) comprising an epitaxial layered structure; and an absorber (34) comprising an epitaxial structure grown on the reflector, such that the intensity of the beam (L) passing through the absorber before and after being reflected can be modulated by means of electric control signals applied to contacts (37,39) connecting to the modulator structure.

    5.
    发明专利
    未知

    公开(公告)号：DE69411493D1

    公开(公告)日：1998-08-13

    申请号：DE69411493

    申请日：1994-09-23

    Applicant: IBM

    Inventor： BEHFAR-RAD ABBAS ,  MEIER HEINZ PETER ,  HARDER CHRISTOPH STEPHEN

    IPC: H01S5/00 ,  H01S5/02 ,  H01S5/16 ,  H01S5/20 ,  H01S5/22 ,  H01S5/32 ,  H01S5/34 ,  H01S3/085 ,  H01S3/19

    Abstract: Making a semiconductor laser having at least a quantum well structure including layers deposited on a semiconductor substrate comprises: (a) forming one the substrate a set of laser layers of a base chemical compsn. and including at least a substitutional element, the laser layers including at least a lower cladding layer having a first concn. value of the substitutional element and a lower graded layer having a chemical compsn. varying from a second concn. value of the substitutional element a% a lower interface of the lower graded layer to a third concn. value of the substitutional element at an upper interface of the lower graded layer; (b) forming an upper graded layer on the quantum well layer; (c) forming an upper graded layer on the quantum well layer of a chemical compsn. having a concn. value of the substitutional element varying from a fifth concn. value at a lower interface of the upper graded layer with the quantum well layer to a sixth concn. value at an upper interface of the upper graded layer; (d) depositing an upper cladding layer of a seventh concn. value of the substitutional element above the upper graded layer and a contact layer of an eighth concn. value above the upper cladding layer; (e) sepg. a laser structure including an active area from a remainder portion of the substrate, thereby forming the semiconductor laser.

    6.
    发明专利
    未知

    公开(公告)号：DE68925810T2

    公开(公告)日：1996-09-26

    申请号：DE68925810

    申请日：1989-12-18

    Applicant: IBM

    Inventor： HARDER CHRISTOPH STEPHAN ,  LENTH WILFRIED ,  MEIER HEINZ PETER ,  RISK WILLIAM PAUL

    IPC: G02F1/35 ,  G02F1/355 ,  G02F1/361 ,  G02F1/37 ,  H01S3/109 ,  H01S5/00 ,  H01S5/0687 ,  H01S5/40 ,  H01S3/133

    Abstract: Apparatus and method for producing coherent blue-green-light radiation having a wavelength of essentially 490-500 nm. A diode laser (10), such as a strained-layer InGaAs/GaAs diode laser, provides a 980-1,000 nm beam (12), and a nonlinear crystal (19) of KTP (KTiOPO4) produces coherent radiation (22) by noncritically phase-matched second-harmonic generation (SHG) of said beam. The beam preferably has a wavelength of essentially 994 nm for generating radiation having a wavelength of essentially 497 nm. The crystal is disposed within an optical resonator (18) and the frequency of the laser is locked to that of the resonator. Alternatively, two diode lasers (10,11) are oriented to provide orthogonally polarized beams each with a wavelength of 980-1,000 nm but within essentially 1 nm of each other, and the KTP crystal is oriented with its a and c axes parallel to the orthogonally polarized beams. The KTP crystal may have an associated optical waveguide along which the beam is propagated to enhance SHG efficiency.

    7.
    发明专利
    未知

    公开(公告)号：DE3877750D1

    公开(公告)日：1993-03-04

    申请号：DE3877750

    申请日：1988-06-28

    Applicant: IBM

    Inventor： MEIER HEINZ PETER ,  GIESON EDWARD A VAN ,  WALTER WILLI

    IPC: H01L21/203 ,  H01L33/00 ,  H01S5/00 ,  H01S5/223 ,  H01S5/227 ,  H01S5/32 ,  H01S3/19

    Abstract: A process for the selective growth of GaAs on a patterned substrate for use in semiconductor laser diode prodn. comprises embedding the active quantum well (QW) of a ridge GaAs QW laser in the higher bandgap material by selective growth of the QW on the horizontal facet of the ridge structure, leaving the sidewall facets of the ridge exposed to the defintion of the higher bandgap cladding layers. The cladding layers pref. provide for both lateral carrier and current confinement.

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