公开(公告)号：DE3581758D1

公开(公告)日：1991-03-28

申请号：DE3581758

申请日：1985-03-13

Applicant: IBM

Inventor： BEHRINGER UWE ,  BOHLEN HARALD ,  NEHMIZ PETER ,  ZAPKA WERNER

IPC: G03F1/00 ,  G01B11/00 ,  G03F1/08 ,  G03F1/16 ,  G03F7/20 ,  H01J37/304 ,  H01J37/317 ,  H01L21/027 ,  H01L21/26 ,  H01L21/30 ,  H01L21/308 ,  H01L21/32 ,  H01L21/66

Abstract: To test transmission masks (3) for electron or ion beam lithography, the corpuscular beam (2) is inclined to guide the shadow image of a mask portion across a pinhole diaphragm (20, 40) comprising at least one aperture with submicron dimensions. The test for geometrical errors is effected with a single hole diaphragm (20) arranged above a scintillator (21) connected to a photomultiplier (22); the single hole diaphragm is positioned below selected measuring points of the exposure mask to determine the accurate position of the measuring point relative to the diaphragm by beam tilting. The relative spacing of two measuring points is derived from the interferometrically measured table displacement and the beam inclination. To test the entire mask area for errors and impurity particles, a multihole diaphragm (40) is used having submicron apertures arranged in matrix fashion above an integrated circuit of the charge transfer type which provides a MOS capacitor as a particle detector underneath each diaphragm opening. The exposure mask is scanned in steps, effecting several single exposures at each position by inclining the beam.