公开(公告)号：JP2001023957A

公开(公告)日：2001-01-26

申请号：JP2000131682

申请日：2000-04-28

Applicant: IBM

Inventor： BENNETT DELORES A ,  NORUM JAMES P ,  YAN HONGWEN ,  CHENFAN YUU

IPC: H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/318

Abstract: PROBLEM TO BE SOLVED: To obtain a method of etching an oxide layer on a nitride layer provided on a substrate at a high selective ratio. SOLUTION: This method includes a process, where the oxide layer on a substrate is plasma-etched with mixed gas which contains carbon and fluorine gas, and a nitrogen-containing gas. For nitride layer formed under the oxide layer, SixNy seeds are formed and deposited on the nitride layer, to substantially balance the etching of the nitride layer, so that the oxide layer can be etched at a high selective ratio on the nitride layer.

公开(公告)号：DE10016938A1

公开(公告)日：2000-11-16

申请号：DE10016938

申请日：2000-04-05

Applicant: IBM

Inventor： BENNETT DELORES A ,  NORUM JAMES P ,  YAN HONGWEN

IPC: H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/318 ,  C23F4/00

Abstract: Process for etching an oxide layer located on a nitride layer in the upper region of a substrate having a high etching selectivity for the oxide layer comprises preparing a plasma derived from a carbonaceous and fluorine-containing gas and a gas containing nitrogen, and etching the substrate in the plasma.

公开(公告)号：DE10016938C2

公开(公告)日：2003-04-24

申请号：DE10016938

申请日：2000-04-05

Applicant: IBM

Inventor： BENNETT DELORES A ,  NORUM JAMES P ,  YAN HONGWEN

IPC: H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/318 ,  C23F4/00

Abstract: Process for etching an oxide layer located on a nitride layer in the upper region of a substrate having a high etching selectivity for the oxide layer comprises preparing a plasma derived from a carbonaceous and fluorine-containing gas and a gas containing nitrogen, and etching the substrate in the plasma.