公开(公告)号：JP2001023957A

公开(公告)日：2001-01-26

申请号：JP2000131682

申请日：2000-04-28

Applicant: IBM

Inventor： BENNETT DELORES A ,  NORUM JAMES P ,  YAN HONGWEN ,  CHENFAN YUU

IPC: H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/318

Abstract: PROBLEM TO BE SOLVED: To obtain a method of etching an oxide layer on a nitride layer provided on a substrate at a high selective ratio. SOLUTION: This method includes a process, where the oxide layer on a substrate is plasma-etched with mixed gas which contains carbon and fluorine gas, and a nitrogen-containing gas. For nitride layer formed under the oxide layer, SixNy seeds are formed and deposited on the nitride layer, to substantially balance the etching of the nitride layer, so that the oxide layer can be etched at a high selective ratio on the nitride layer.

公开(公告)号：JPH10178090A

公开(公告)日：1998-06-30

申请号：JP32145997

申请日：1997-11-21

Applicant: IBM

Inventor： DAVID CUTLER EARLGLEN ,  GARY BELLA BRONER ,  WESLEY CHARLOUIS NATSURE ,  ERIC GREGORY WALTON ,  CHENFAN YUU

IPC: H01L21/76 ,  H01L21/311 ,  H01L21/762

Abstract: PROBLEM TO BE SOLVED: To enable a trench shape to be used and to improve the yield of the shape by creating a set of transistors formed in the active region of a substrate and an integrated circuit with a cross connection between then within a silicon substrate. SOLUTION: A step for blanket injection and an upstream process step such as a step for forming pad oxide and pad nitride are used as substrate preparation steps, two transistors 60 which a gate 62 and a side wall 61 are separated by a constructed trench 15, and a drain 63 of the left transistor is connected to a source 64 of the right transistor by a local inter connection piece 72 that so separated from a first level metal member 82 by an oxide piece 74. The oxide piece 74 smoothed the surface, this achieving an upper surface 75 that is treated to reduce the risk of short-circuiting. An lining step for patterning by metal cross connection and adhesion of dielectric between levels and an upstream side process step such as a step for forming a contact are used as circuit completion steps.