MULTIPLE-ADDRESS HIGHLY INTEGRATED SEMI-CONDUCTOR MEMORY

    公开(公告)号:DE3070394D1

    公开(公告)日:1985-05-02

    申请号:DE3070394

    申请日:1980-11-26

    Abstract: A multiaddressable highly integrated semiconductor storage is provided, the storage locations of which are addressable by several independent address systems for parallel reading and/or writing. The storage locations are each made up of n storage elements. One storage location consists, for example, of at least two flip-flops which, via coupling elements are connected to associated separate bit and word lines. Each storage location has at least three independently selectable or addressable entry/exit ports permitting the following operations to be executed in parallel: Read word A, read word B, write word C as well as any combination of two or individual ones of those operations. The number of read ports can be increased by providing further address systems and by substituting triple, quadruple, etc., storage cells for a cell pair.

    3.
    发明专利
    未知

    公开(公告)号:CH596670A5

    公开(公告)日:1978-03-15

    申请号:CH254776

    申请日:1976-03-02

    Applicant: IBM

    Abstract: The disclosure is directed to the circuitry and monolithic semiconductor structure of Current Hogging Injection Logic Configurations. More specifically the disclosure relates to a semiconductor arrangement for the basic components of a highly integratable, logic semiconductor circuit concept predicated on multicollector inverter transistors which are fed by means of a carrier injection into their emitter/base zones.

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