METHOD AND APPARATUS FOR LASER ETCHING

    公开(公告)号:JPH04228284A

    公开(公告)日:1992-08-18

    申请号:JP4218391

    申请日:1991-02-15

    Applicant: IBM

    Abstract: PURPOSE: To accomplish laser etching of a substrate in a liquid by laser induced sonic cavitation at the substrate surface. CONSTITUTION: The preferred substrate 28 is laser energy absorbing and has a finite melting temp. The preferred liquid 12 is an organic or inorganic inert liquid which does not chemically react with a substrate at room temp. The laser 22 is preferably a copper vapor laser, but a chopped beam cw argon ion laser or a YAG laser adjusted to a low power output sufficient to avoid the formation of a recast layer can also be used. The laser parameters are adjusted for causing the growth and collapse of bubbles at the substrate surface. The laser etching has particular application in the fabrication of rails in magnetic head sliders and dicing of Al2 O3 -TiC, TiC, SiC, Si/SiO2 , and laser energy absorbing metals and metal oxides.

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