公开(公告)号：EP1715996A4

公开(公告)日：2009-12-09

申请号：EP03819267

申请日：2003-12-05

Applicant: IBM

Inventor： NATARAJAN GOVINDARAJAN ,  BEZAMA RASCHID J

IPC: B32B18/00 ,  C04B35/645 ,  H01L21/48 ,  H05K1/03 ,  H05K3/46

CPC classification number: B32B18/00 ,  C04B35/645 ,  C04B2237/32 ,  C04B2237/343 ,  C04B2237/366 ,  C04B2237/561 ,  C04B2237/562 ,  C04B2237/565 ,  C04B2237/567 ,  C04B2237/62 ,  C04B2237/64 ,  C04B2237/66 ,  C04B2237/702 ,  H01L21/4857 ,  H05K1/0306 ,  H05K3/4611 ,  H05K3/4629 ,  H05K2201/09781 ,  Y10T156/108 ,  Y10T428/24926

公开(公告)号：JP2006019730A

公开(公告)日：2006-01-19

申请号：JP2005184662

申请日：2005-06-24

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： BEZAMA RASCHID J ,  COLGAN EVAN GEORGE ,  MAGERLEIN JOHN H ,  SCHMIDT ROGER R

IPC: H01L23/473

CPC classification number: F28F3/04 ,  F28F3/12 ,  F28F2260/02 ,  H01L23/473 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide an apparatus and a method of cooling an electronic device such as an IC chip or the like uneven in power density distribution, mounted on a package substrate upside down with efficiency and low operating pressure. SOLUTION: The invention comprises the apparatus and the method operated by microchannel cooling which locally improve cooling capability with respect to a (hot spot) region of the IC chip higher than an average in power density by operating a mechanism varying local cooling capability with respect to a high power density region (namely, "hot spot") of a semiconductor chip higher than the average in the power density. For example, an integrally formed microchannel cooling device (or a microchannel heat sink device) cooling the IC chip is designed so that the local cooling capability with respect to the high power density region (namely, "hot spot") of the IC chip higher than the average in the power density can vary in such a way that a cooling fluid flows and distributed uniformly, and that a pressure drop along a cooling liquid passage is suppressed to a minimum. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种以功率密度分布不​​均匀的电子器件如IC芯片等的冷却装置和方法，其以效率和低的操作压力上下颠倒地安装在封装衬底上。 解决方案：本发明包括通过微通道冷却操作的装置和方法，其通过操作改变局部冷却能力的机构来局部地提高相对于IC芯片的（热点）区域的功率密度的平均值的冷却能力 相对于高于功率密度的平均值的半导体芯片的高功率密度区域（即，“热点”）。 例如，设计冷却IC芯片的整体形成的微通道冷却装置（或微通道散热装置），使得相对于IC芯片的高功率密度区域（即，“热点”）的局部冷却能力更高 功率密度的平均值可以以冷却流体均匀流动并分布的方式变化，并且沿着冷却液通道的压降被抑制到最小。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：AU2003297642A1

公开(公告)日：2005-08-12

申请号：AU2003297642

申请日：2003-12-05

Applicant: IBM

Inventor： NATARAJAN GOVINDARAJAN ,  BEZAMA RASCHID J

IPC: B32B18/00 ,  C04B35/645 ,  H01L21/48 ,  H05K1/03 ,  H05K3/46 ,  B32B31/26 ,  B32B31/18

Abstract: A method to control the post sinter distortion of hot pressing sintered multilayer ceramic laminate by placing a non-densifying structure in the green ceramic laminate prior to sintering. One or more non-densifying structures are placed on one or more ceramic greensheets which are then stacked and laminated to form a green ceramic laminate. The laminate is then sintered and the non-densifying structure will control the dimensions of the hot pressed multilayer ceramic substrate. The method can be used to control post sinter dimensions in MLC substrates manufactured as either single or multi-up substrates by placing the non-densifying structure in the kerf area between the individual product ups prior to sintering.