Abstract:
PROBLEM TO BE SOLVED: To provide a highly reliable copper structure for improving current carrying capabilities (e.g., current spreading) of an interconnect, and to provide a method of fabricating the same. SOLUTION: The interconnect structure provides a highly reliable copper interconnect structure for improving current carrying capabilities (e.g., current spreading). The structure includes an under bump metallurgy formed in a trench. The under bump metallurgy includes at least: one adhesion layer; one plated barrier layer; and one plated conductive metal layer provided between the adhesion layer and the plated barrier layer. The structure further includes a solder bump formed on the under bump metallurgy. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
A gas-loaded diaphragm (10) for exerting a predetermined pressure on a ceramic substrate during sintering to prevent x-y shrinkage. In the most preferred embodiment, the diaphragm comprises a gas-filled base composed of two opposing discs, and a substantially hollow gas-filled toroid container (20) disposed around the perimeter of the opposing discs and communicating therewith to permit gas flow therebetween. This diaphragm (10) is disposed in relation to a ceramic substrate-containing cell (28) so that when it is heated to a desired temperature, the gas in the diaphragm expands and forces the two opposing discs (12) apart to thereby exert a predetermined pressure on the ceramic substrate-containing cell (28).