公开(公告)号：DE3379699D1

公开(公告)日：1989-05-24

申请号：DE3379699

申请日：1983-07-13

Applicant: IBM

Inventor： BHATIA HARSARAN SINGH ,  BHATIA SATYAPAL SINGH ,  RISEMAN JACOB ,  VALSAMAKIS EMMANUEL A

IPC: H01L29/73 ,  H01L21/225 ,  H01L21/285 ,  H01L21/331 ,  H01L23/485 ,  H01L29/735 ,  H01L21/60 ,  H01L23/48

Abstract: The method and resulting structure for making contact to a narrow width PN junction region in any desired semiconductor body utilizes a substantially vertical conformal conductive layer (26) formed over the desired PN junction region (30, 32). The body is heated to a suitable temperature to cause a dopant to diffuse from the vertical conductive layer (26) into the semiconductor body to form the narrow width PN junction region (30, 32). A substantially horizontal conductive layer (22) makes contact to the substantially vertical layer (26) so as to have the horizontal conductive layer (22) in electrical contact to the PN junction region (30, 32). Electrical contacts (34, 36) can be established to the horizontal conductive layer at any convenient location. A lateral PNP transistor is one type of device that can be made.