公开(公告)号：WO2013081853A3

公开(公告)日：2015-06-18

申请号：PCT/US2012065497

申请日：2012-11-16

Applicant: IBM

Inventor： AFZALI-ARDAKANI ALI ,  BHUPESH CHANDRA ,  TULEVSKI GEORGE S

IPC: H01L29/06

CPC classification number: H01L29/778 ,  B82Y10/00 ,  H01L29/1606 ,  H01L51/002 ,  H01L51/0048 ,  H01L51/0558

Abstract: A method and an apparatus for doping a graphene or nanotube thin-film fieldeffect transistor device to improve electronic mobility. The method includes selectively applying a dopant to a channel region of a graphene or nanotube thin-film field-effect transistor device to improve electronic mobility of the field-effect transistor device. An apparatus that includes a graphene or nanotube thin-film field-effect transistor device fabricated on a substrate with an exposed channel region, wherein the channel region is doped with a dopant to improve electronic mobility, and contact metal disposed over the doped channel region of the graphene or nanotube thin-film field-effect transistor device.

Abstract translation: 一种用于掺杂石墨烯或纳米管薄膜场效应晶体管器件以改善电子迁移率的方法和装置。 该方法包括选择性地将掺杂剂施加到石墨烯或纳米管薄膜场效应晶体管器件的沟道区域，以改善场效应晶体管器件的电子迁移率。 一种装置，其包括在具有暴露沟道区的衬底上制造的石墨烯或纳米管薄膜场效应晶体管器件，其中所述沟道区域掺杂有掺杂剂以改善电子迁移率，以及设置在掺杂沟道区域上的接触金属 石墨烯或纳米管薄膜场效应晶体管器件。