公开(公告)号：DE1639259A1

公开(公告)日：1971-02-04

申请号：DEJ0035397

申请日：1968-01-03

Applicant: IBM

Inventor： FU FANG FRANK ,  BICKSLER FOWLER ALAN

IPC: H01L23/29 ,  H01L27/07 ,  H01L29/00 ,  H01L29/08 ,  H01L29/68 ,  H01L11/14

Abstract: 1,141,980. Controllable negative resistance device. INTERNATIONAL BUSINESS MACHINES CORP. 20 Dec., 1967 [13 Jan., 1967], No. 57988/67. Heading H1K. The threshold voltage at which the negative resistance through an insulator disposed between a semi-conductor body and a metal electrode occurs is controlled by varying the voltage on a rectifying electrode across a PN junction laterally spaced from the insulatorsemi-conductor interface by at least a minority carrier diffusion length. In a typical embodiment the semi-conductor is P or N-type silicon, the metal electrode of aluminium, silver or gold and the insulator silicon dioxide which has been doped with gallium phosphide or gallium by exposure at 800‹ C. to the vapour thereof. Alternative insulators suggested are gallium arsenide and cadmium sulphide. The device is switchable from the high to the low resistance condition and back by means of pulses of respectively opposite polarity applied to the control electrode or junction.

公开(公告)号：DE1514041A1

公开(公告)日：1969-07-24

申请号：DEI0028885

申请日：1965-08-30

Applicant: IBM

Inventor： BICKSLER FOWLER ALAN ,  JEWETT LASHER GORDON

IPC: G02F3/00 ,  G02F3/02 ,  H01S3/06 ,  H01S5/062 ,  H03K23/12