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    2.
    发明专利
    未知

    公开(公告)号：DE1639259A1

    公开(公告)日：1971-02-04

    申请号：DEJ0035397

    申请日：1968-01-03

    Applicant: IBM

    Inventor： FU FANG FRANK ,  BICKSLER FOWLER ALAN

    IPC: H01L23/29 ,  H01L27/07 ,  H01L29/00 ,  H01L29/08 ,  H01L29/68 ,  H01L11/14

    Abstract: 1,141,980. Controllable negative resistance device. INTERNATIONAL BUSINESS MACHINES CORP. 20 Dec., 1967 [13 Jan., 1967], No. 57988/67. Heading H1K. The threshold voltage at which the negative resistance through an insulator disposed between a semi-conductor body and a metal electrode occurs is controlled by varying the voltage on a rectifying electrode across a PN junction laterally spaced from the insulatorsemi-conductor interface by at least a minority carrier diffusion length. In a typical embodiment the semi-conductor is P or N-type silicon, the metal electrode of aluminium, silver or gold and the insulator silicon dioxide which has been doped with gallium phosphide or gallium by exposure at 800‹ C. to the vapour thereof. Alternative insulators suggested are gallium arsenide and cadmium sulphide. The device is switchable from the high to the low resistance condition and back by means of pulses of respectively opposite polarity applied to the control electrode or junction.

    4.
    发明专利
    未知

    公开(公告)号：DE1564151A1

    公开(公告)日：1969-07-24

    申请号：DEJ0030835

    申请日：1966-05-14

    Applicant: IBM

    Inventor： FU FANG FRANK ,  NIEN YU HWA ,  JOHN WALKER EDWARD

    IPC: H01L27/088 ,  H01L21/00 ,  H01L21/22 ,  H01L21/316 ,  H01L21/8234 ,  H01L21/8236 ,  H01L29/00 ,  H01L29/78 ,  H01L11/14

    Abstract: A method for manufacturing a field-effect, isolated-barrier transistor, comprising the steps of: forming by diffusion separate parts, of a first type of conductivity, on the surface of an elementary semiconductor wafer of the opposite conductivity type; forming an insulating layer at least in the intermediate part of said surface lying between said diffused portions separated and defining a conduit channel therebetween, having a given surface potential the interfacial zone between said insulating layer and said intermediate portion of said surface. said wafer; and forming on said insulating layer a barrier electrode for applying electric fields to said intermediate surface portion; method characterized by the improvement comprising the step of passing through diffusion an impurity material of the acceptor type, through said insulating layer and until penetrating a narrow layer of said intermediate surface part before forming said barrier electrode, for control the surface potential in said interfacial zone. (Machine-translation by Google Translate, not legally binding)

    7.
    发明专利
    未知

    公开(公告)号：DE1589963A1

    公开(公告)日：1970-05-06

    申请号：DE1589963

    申请日：1967-08-22

    Applicant: IBM

    Inventor： FU FANG FRANK ,  EUGENE HOWARD JUN WEBSTER

    IPC: H02M7/21 ,  H01L29/00 ,  H02M7/12 ,  H02M7/155 ,  H02M7/217 ,  H03D1/18 ,  H02M7/44

    Abstract: 1,127,579. Rectifying. INTERNATIONAL BUSINESS MACHINES CORP. 5 Sept., 1967 [15 Sept., 1966], No. 40624/67. Heading H2F. A rectifying circuit comprises a field-effect transistor with A.C. applied to the source or drain and an A.C. biasing signal on the gate in phase with the current applied to the source or drain. The circuit may be half-wave (Fig. 1, not shown), full-wave (Fig. 3) or a bridge (Fig. 4, not shown). The transistor may be of the NPN or PNP type and preferably operates in the enhancement mode. As seen in Fig. 3 the gate is supplied with a higher voltage than the source, and this voltage is adjustable by resistors R1, R2 to control the power in the load R. Electronic control may be used by replacing R2 by extra field-effect transistors. For high powers the transistors T2, T3 are of the insulated-gate type but for low powers junction types may be used. The biasing signal on the gate may be of square waveform.

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