公开(公告)号：DE2449012A1

公开(公告)日：1975-05-07

申请号：DE2449012

申请日：1974-10-15

Applicant: IBM

Inventor： BRATTER ROBERT LEWIS ,  GAIND ARUN KUMAR

IPC: H01L21/76 ,  H01L21/31 ,  H01L21/316 ,  H01L21/32 ,  H01L21/331 ,  H01L21/762 ,  H01L29/73

公开(公告)号：DE2422970A1

公开(公告)日：1975-01-23

申请号：DE2422970

申请日：1974-05-11

Applicant: IBM

Inventor： BRATTER ROBERT LEWIS ,  GAIND ARUN KUMAR

IPC: C23C16/40 ,  H01L21/316 ,  C23C13/00

Abstract: The present invention relates to an improvement in the conventional method of forming silicon dioxide films by a chemical-vapor deposition reaction of a mixture of an oxidizing agent and SiHnCl(4-n), where n is an integer of from 0 to 4. Such conventional methods which are conducted at temperatures of at least 700 DEG C provide silicon dioxide films on silicon substrates which are substantially free of mobile ion contamination as evidenced by insignificant flat-band voltage shift when subjected to standard bias-temperature test conditions; such insignificant flat-band voltage shifts are indicative of a maximum increase of 1 x 1011 charges/cm2 in the flat-band surface charge resulting from such bias-temperature conditions.