公开(公告)号：DE2449012A1

公开(公告)日：1975-05-07

申请号：DE2449012

申请日：1974-10-15

Applicant: IBM

Inventor： BRATTER ROBERT LEWIS ,  GAIND ARUN KUMAR

IPC: H01L21/76 ,  H01L21/31 ,  H01L21/316 ,  H01L21/32 ,  H01L21/331 ,  H01L21/762 ,  H01L29/73

公开(公告)号：DE2422970A1

公开(公告)日：1975-01-23

申请号：DE2422970

申请日：1974-05-11

Applicant: IBM

Inventor： BRATTER ROBERT LEWIS ,  GAIND ARUN KUMAR

IPC: C23C16/40 ,  H01L21/316 ,  C23C13/00

Abstract: The present invention relates to an improvement in the conventional method of forming silicon dioxide films by a chemical-vapor deposition reaction of a mixture of an oxidizing agent and SiHnCl(4-n), where n is an integer of from 0 to 4. Such conventional methods which are conducted at temperatures of at least 700 DEG C provide silicon dioxide films on silicon substrates which are substantially free of mobile ion contamination as evidenced by insignificant flat-band voltage shift when subjected to standard bias-temperature test conditions; such insignificant flat-band voltage shifts are indicative of a maximum increase of 1 x 1011 charges/cm2 in the flat-band surface charge resulting from such bias-temperature conditions.

公开(公告)号：DE3476492D1

公开(公告)日：1989-03-02

申请号：DE3476492

申请日：1984-08-23

Applicant: IBM

Inventor： GAIND ARUN KUMAR ,  KULKARNI SUBHASH BALKRISHNA ,  POPONIAK MICHAEL ROBERT

IPC: H01L21/205 ,  H01L21/22 ,  H01L21/74 ,  H01L21/34

Abstract: A reduced pressure epitaxial deposition method is disclosed to maximize performance and leakage limited yield of devices formed in the epitaxial layer. The method includes specified prebake and deposition conditions designed to minimize arsenic (buried subcollector) and boron (buried isolation) autodoping effects when pressures below one atmosphere are selected in accordance with the subcollector-to-isolation area ratio.

公开(公告)号：DE2861528D1

公开(公告)日：1982-02-25

申请号：DE2861528

申请日：1978-06-06

Applicant: IBM

Inventor： CHANG AUGUSTINE WEI-CHUN ,  GAIND ARUN KUMAR

IPC: H01L21/76 ,  H01L21/306 ,  H01L21/331 ,  H01L21/8238 ,  H01L21/00