公开(公告)号：JP2002313799A

公开(公告)日：2002-10-25

申请号：JP2002060325

申请日：2002-03-06

Applicant: IBM

Inventor： BRENNAN CIARAN J ,  VOLDMAN STEVEN H

IPC: H01L21/20 ,  H01L21/331 ,  H01L21/822 ,  H01L21/8222 ,  H01L27/04 ,  H01L27/06 ,  H01L29/73 ,  H01L29/732 ,  H01L29/737 ,  H01L31/117

Abstract: PROBLEM TO BE SOLVED: To provide an ESD SiGe resistant device used in high-frequency circuits. SOLUTION: This bipolar transistor is provided with a silicon substrate 105, a collector 110 formed on the silicon substrate, and an extrinsic base area 180 forming a intrinsic base area 180A and an internal resistor 240, and it is further provided with a base formed on the collector 110, an emitter 200 formed on the intrinsic base area 180A, and a dielectric layer 160 formed between the extrinsic base area 180B and collector 110, and the extrinsic base area 180B, dielectric layer 160 and collector 110 comprise an internal capacitor 235. The base of the transistor is made of silicon germanium.