公开(公告)号：DE68909977T2

公开(公告)日：1994-05-05

申请号：DE68909977

申请日：1989-01-27

Applicant: IBM

Inventor： BRODSKY MARC H ,  FANG FRANK F ,  MEYERSON BERNARD S

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/10 ,  H01L29/15 ,  H01L29/161 ,  H01L29/201 ,  H01L29/737 ,  H01L29/14

公开(公告)号：DE68909977D1

公开(公告)日：1993-11-25

申请号：DE68909977

申请日：1989-01-27

Applicant: IBM

Inventor： BRODSKY MARC H ,  FANG FRANK F ,  MEYERSON BERNARD S

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/10 ,  H01L29/15 ,  H01L29/161 ,  H01L29/201 ,  H01L29/737 ,  H01L29/14

公开(公告)号：CA1160179A

公开(公告)日：1984-01-10

申请号：CA362154

申请日：1980-10-10

Applicant: IBM

Inventor： BRODSKY MARC H ,  SCOTT BRUCE A

IPC: H01L31/04 ,  C23C16/06 ,  C23C16/24 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40 ,  H01L21/205 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  C23C11/00

Abstract: Disilane (Si2H6), trisilane (Si3H8) or a higher order silane is applied in a glow discharge process to rapidly and efficiently form a film of hydrogenated amorphous silicon on a substrate. An inductively coupled RF glow discharge apparatus, a capacitively coupled glow discharge apparatus or a DC glow discharge apparatus may be employed to deposit the amorphous silicon on a conducting or non-conducting substrate. The disilane or higher order silanes may also be combined in a glow discharge process with gases which contain elements such as nitrogen or oxygen to rapidly deposit corresponding compound films. Y0979-068