公开(公告)号：US3462635A

公开(公告)日：1969-08-19

申请号：US3462635D

申请日：1966-10-24

Applicant: IBM

Inventor： BROERS ALEC N

IPC: H01J1/20 ,  H01J29/04 ,  H01J37/065 ,  H01J37/07 ,  H01J37/073 ,  H01J37/075 ,  H01J1/88 ,  H01J7/24 ,  H01J61/52

CPC classification number: H01J1/20 ,  H01J29/04 ,  H01J37/065 ,  H01J37/07 ,  H01J37/073 ,  H01J37/075

公开(公告)号：US3521113A

公开(公告)日：1970-07-21

申请号：US3521113D

申请日：1969-02-19

Applicant: IBM

Inventor： BROERS ALEC N

IPC: H01J1/20 ,  H01J37/075 ,  H01J1/02

CPC classification number: H01J1/20 ,  H01J37/075

公开(公告)号：CA1204882A

公开(公告)日：1986-05-20

申请号：CA412957

申请日：1982-10-06

Applicant: IBM

Inventor： BROERS ALEC N ,  LAIBOWITZ ROBERT B

IPC: G03F1/00 ,  G03F1/08 ,  G03F7/095 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  H05K3/00 ,  H05K3/04 ,  H05K3/06 ,  H01L27/00 ,  H01L21/70

Abstract: SUBMICRON CIRCUIT STRUCTURES AND METHOD OF FORMATION Double sided lithography is disclosed for fabricating ultra-small multilayer microcircuit structures without need for any intermediate realignment and without need for any intermediate layer deposition involving reestablishment of surface planarity. Microcircuit patterns are defined on opposite sides of a thin substrate by an exposure tool without intermediate removal of the substrate from the exposure tool, the microcircuit pattern on one side being defined by incident patterning radiation and the microcircuit pattern on the other side being defined by patterning radiation which has passed through the thin substrate.

公开(公告)号：CA890593A

公开(公告)日：1972-01-11

申请号：CA890593D

Applicant: IBM

Inventor： BROERS ALEC N

公开(公告)号：CA850239A

公开(公告)日：1970-08-25

申请号：CA850239D

Applicant: IBM

Inventor： BROERS ALEC N