公开(公告)号：JP2000357749A

公开(公告)日：2000-12-26

申请号：JP2000160921

申请日：2000-05-30

Applicant: IBM

Inventor： MANDELMAN JACK ALLAN ,  BRONER GERI B ,  RAMACHANDRA DEIBAKARUNI

IPC: H01L21/28 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/8242 ,  H01L27/088 ,  H01L27/092 ,  H01L27/10 ,  H01L27/108 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a double work function doping and a borderless array diffusion contact. SOLUTION: This method includes steps for forming a semiconductor substrate 5, a gate insulator 10, conductors 61, 12 on the gate insulator, an insulation cap on the conductors, and an insulation spacer 92 on part of the sidewall of the conductors and of the insulation cap. This method also includes a step for doping a part of the semiconductor substrate and of the conductors with a first conductive dopant and the other part with a second conductive dopant. The conductors are annealed, to allow the first and the second conductive dopants to spread crossing into into each conductor.