公开(公告)号：IT1149978B

公开(公告)日：1986-12-10

申请号：IT2271780

申请日：1980-06-11

Applicant: IBM

Inventor： BSCHWENDTNER JORG ,  LOHLEIN WOLFDIETER

IPC: H03K5/00 ,  H03K5/02 ,  H03K19/017 ,  H03K19/0175 ,  H03K19/0185 ,  H03K19/094

Abstract: A known FET driver circuit which is to be controlled at the gate by means of relatively low TTL signals, is improved in such a manner that the source potential of the input transistors is shifted oppositely to the input signal. This leads to an increase in the effective potential difference in the signal level applied to the input transistors and thus to an improved switching speed.