公开(公告)号：JP2002261004A

公开(公告)日：2002-09-13

申请号：JP2002016872

申请日：2002-01-25

Applicant: IBM

Inventor： ROSENBLUTH ALAN E ,  BUKOFSKY SCOTT JOSEF ,  WONG ALFRED K K

IPC: G03F1/32 ,  G03F1/34 ,  G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a method for optimally selecting an illuminating distribution and a reticle mask feature. SOLUTION: A system and the method for printing the pattern on a semiconductor by a lithography are executed by using a combination of an illumination and a mask pattern to be optimized so as to generate a desired pattern. A method for optimizing both the illumination and the mask pattern can develop the mask pattern not restricted by the desired pattern of the shape to be printed. Accordingly, this method can provide a high quality image even when the desired printing pattern has a critical size approaching to a resolving power of the lithographic system. The mask pattern of the result by this method does not clearly correspond to the printed desired pattern. Such a mask includes a phase shifting technique for forming a dark area of the image by utilizing a destructive interference, and is not restricted so as to coincide with the desired printing pattern.