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    DATA CORRECTING HIERARCHICAL INTEGRATED CIRCUIT LAYOUT ACCOMMODATING COMPENSATE FOR LONG RANGE CRITICAL DIMENSION VARIATION
    2.
    发明申请
    DATA CORRECTING HIERARCHICAL INTEGRATED CIRCUIT LAYOUT ACCOMMODATING COMPENSATE FOR LONG RANGE CRITICAL DIMENSION VARIATION 审中-公开
    数据校正分层整合电路布局扩展补偿长期关键尺寸变化

    公开(公告)号：WO2009131827A2

    公开(公告)日：2009-10-29

    申请号：PCT/US2009039703

    申请日：2009-04-07

    Applicant: IBM ,  STOBERT IAN P ,  ROSENBLUTH ALAN E

    Inventor： STOBERT IAN P ,  ROSENBLUTH ALAN E

    IPC: G06F17/50

    CPC classification number: G06F17/5081 ,  G03F1/36

    Abstract: A solution for performing a data correction on a hierarchical integrated circuit layout is provided. A method includes: receiving a CD compensation map for the long range critical dimension variation prior to the data correction; grouping compensation amounts of the CD compensation into multiple compensation ranges; generating multiple target layers corresponding to the multiple compensation ranges; super-imposing a region of the CD compensation map having a compensation amount falling into a compensation range over a respective target layer to generate a target shape; performing the data correction on the layout to generate a data corrected layout; performing the data correction on the target shape separately to generate a data corrected target shape; and combining the data corrected layout and the data corrected target shape based on the CD compensation map.

    Abstract translation: 提供了一种用于在分层集成电路布局上执行数据校正的解决方案。 一种方法包括：在数据校正之前接收用于长距离临界尺寸变化的CD补偿图; 将CD补偿的补偿量分组为多个补偿范围; 产生对应于多个补偿范围的多个目标层; 超级CD补偿图的区域具有落在相应目标层上的补偿范围内的补偿量以产生目标形状; 在布局上执行数据校正以生成数据校正布局; 分别对目标形状进行数据校正，生成数据校正对象的形状; 并且基于CD补偿图组合数据校正布局和数据校正目标形状。

    IMPROVING THE STABILITY OF ION BEAM GENERATED ALIGNMENT LAYERS BY SURFACE MODIFICATION
    3.
    发明申请
    IMPROVING THE STABILITY OF ION BEAM GENERATED ALIGNMENT LAYERS BY SURFACE MODIFICATION 审中-公开
    通过表面改性改善离子束生成对准层的稳定性

    公开(公告)号：WO02057839A3

    公开(公告)日：2003-03-13

    申请号：PCT/US0144989

    申请日：2001-11-30

    Applicant: IBM

    Inventor： CALLEGARI ALESSANDRO C ,  CHAUDHARI PRAVEEN ,  DOANY FUAD E ,  DOYLE JAMES P ,  GALLIGAN EILEEN A ,  HOUGHAM GARETH G ,  GLOWNIA JAMES H ,  LACEY JAMES A ,  LIEN SHUI-CHIH ,  LU MINHAU ,  ROSENBLUTH ALAN E ,  YANG KEI-HSIUNG

    IPC: B01J19/12 ,  C01B31/02 ,  C23C14/48 ,  C23C14/58 ,  G02F1/1337

    CPC classification number: G02F1/13378

    Abstract: A method for preparing a alignment layer surface provides a surface on the alignment layer. A chemically modified surfae [117] is formed as a result of quenching and/or ion beam treatment in accordance with the present invention, and reactive gas is introduced to the ion beam to saturate dangling bonds on the surface. Layer [117] is now substantially free from dangling bonds and free radicals which could degrade properties of a liquid crystal display. Now, a substrate [101] is formed for use in a liquid crystal displax device. Another method for preparing an alignment layer. The surface is bombarded with ions and quenched with a reactive component to saturate dangling bonds on the surface.

    Abstract translation: 制备取向层表面的方法提供了取向层上的表面。 作为根据本发明的淬火和/或离子束处理的结果形成化学改性的表面[117]，并且将反应性气体引入到离子束中以饱和表面上的悬挂键。 层[117]现在基本上没有可能劣化液晶显示器性质的悬挂键和自由基。 现在，形成用于液晶置换装置的基板[101]。 制备取向层的另一种方法。 表面用离子轰击并用反应性组分淬火以使表面上的悬挂键饱和。

    Extending range of lithographic simulation integral
    4.
    发明专利
    Extending range of lithographic simulation integral 有权
    扩展的平面模拟集成范围

    公开(公告)号：JP2005128557A

    公开(公告)日：2005-05-19

    申请号：JP2004310633

    申请日：2004-10-26

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： GALLATIN GREGG M ,  GOFMAN EMANUEL ,  LAI KAFAI ,  LAVIN MARK A ,  MUKHERJEE MAHARAJ ,  RAMM DOV ,  ROSENBLUTH ALAN E ,  SHLAFMAN SHLOMO

    IPC: G03F1/08 ,  G03F1/14 ,  H01L21/027

    CPC classification number: G03F1/36 ,  G03F1/70

    Abstract: PROBLEM TO BE SOLVED: To provide a method for calculating intermediate-range and long-range image contributions from mask polygons.
    SOLUTION: An algorithm is introduced having application to optical proximity correction in optical lithography. A finite integral for each sector of a polygon replaces an infinite integral. A finite integral is achieved by integrating over two triangles instead of integrating on full sectors. An analytical approach is presented for a power law kernel to reduce the numerical integration of a sector to an analytical expression evaluation. The mask polygon is divided into a plurality of regions to calculate effects of interaction such as intermediate-range and long-range effects, by truncating the mask instead of truncating the kernel function.
    COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种用于从掩模多边形计算中间范围和远程图像贡献的方法。 解决方案：引入了一种应用于光学光刻中的光学邻近校正的算法。 多边形的每个扇区的有限积分代替无限积分。 通过对两个三角形进行积分而不是整个扇区进行积分来实现有限积分。 针对幂律内核提出了一种分析方法，以减少一个部门与分析表达式评估的数值整合。 掩模多边形被划分成多个区域，以通过截断掩码而不是截断核函数来计算诸如中间范围和长距离效应的交互的效果。 版权所有（C）2005，JPO＆NCIPI

    REFLECTION-TYPE LIGHT BULB AND PROJECTING DEVICE
    5.
    发明专利
    REFLECTION-TYPE LIGHT BULB AND PROJECTING DEVICE 失效

    公开(公告)号：JP2000258764A

    公开(公告)日：2000-09-22

    申请号：JP2000052801

    申请日：2000-02-29

    Applicant: IBM

    Inventor： HO KENNETH C ,  LU MINHUA ,  ROSENBLUTH ALAN E ,  YANG KEI-HSIUNG

    IPC: G09G3/36 ,  G02B27/28 ,  G02F1/13 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/139 ,  G03B21/28 ,  G09G3/20 ,  H04N9/31

    Abstract: PROBLEM TO BE SOLVED: To obtain a light bulb containing a twisted nematic liquid crystal(LC) layer in which the contrast and efficiency are improved and visibility of spacer posts in a black state is decreased by forming a reflection electrode with its edges parallel or perpendicular to the director axis of liquid crystal molecules when the director axis is projected on the surface of a back face. SOLUTION: A reflection pixel electrode 10 is formed on the lower side of a LC layer 4. The general alignment of the LC molecules is shown as a series of arrows from an arrow 2 on the upper face of the LC layer 4 to the arrow 3 on the lower face. The twisting orientation of the arrows from the upper part to the lower part represents the twist of the LC. The axis of the LC molecule and the rubbing direction on the lower substrate 6 are aligned along the edge of the pixel electrode 10 except for a small pretilt angle of the molecules on the back face. The polarization direction of the input polarized light is parallel or perpendicular to the LC director projected on the upper substrate. The LC director having specified depth in the LC is slightly tilted from the back face, which means that the LC director is oriented in the direction in which the refractive index for abnormal rays is minimum or maximum.

    Method for computing manufacturability of lithographic mask by selecting target edge pair
    8.
    发明专利
    Method for computing manufacturability of lithographic mask by selecting target edge pair 有权
    通过选择目标边缘对计算掩模的可制造性的方法

    公开(公告)号：JP2010140020A

    公开(公告)日：2010-06-24

    申请号：JP2009256152

    申请日：2009-11-09

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： INOUE TADANORI ,  TIAN KEHAN ,  MELVILLE DAVID O ,  SAKAMOTO MASAHARU ,  MUTA HIDEMASA ,  ROSENBLUTH ALAN E

    IPC: G03F1/08 ,  H01L21/027

    CPC classification number: G03F1/68 ,  G03F1/78

    Abstract: PROBLEM TO BE SOLVED: To provide a method for computing manufacturability of a lithographic mask to be used for fabricating a semiconductor device. SOLUTION: A set of a plurality of target edges is selected from mask layout data of a lithographic mask (402). Then, target edge pairs are selected from the selected set of target edges (404). The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is computed based on the target edge pairs selected (406). The manufacturability of the lithographic mask is output (408). The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种用于计算用于制造半导体器件的光刻掩模的可制造性的方法。 解决方案：从光刻掩模（402）的掩模布局数据中选择一组多个目标边缘。 然后，从所选择的一组目标边缘中选择目标边缘对（404）。 基于所选择的目标边缘对（406）计算光刻掩模的可制造性，包括制造光刻掩模的制造损失。 输出光刻掩模的可制造性（408）。 光刻掩模的可制造性取决于制造光刻掩模的制造损失。 版权所有（C）2010，JPO＆INPIT

    Fast model-based optical proximity correction
    9.
    发明专利
    Fast model-based optical proximity correction 有权
    基于快速模型的光学近似校正

    公开(公告)号：JP2005234571A

    公开(公告)日：2005-09-02

    申请号：JP2005039330

    申请日：2005-02-16

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： ROSENBLUTH ALAN E ,  GALLATIN GREGG M ,  GORDON RONALD L ,  SEONG NAKGEUON ,  LVOV ALEXEY Y ,  HINSBERG WILLIAM D ,  HOFFNAGLE JOHN A ,  HOULE FRANCES A ,  SANCHEZ MARTHA I

    IPC: G03F1/08 ,  G03B27/54 ,  G03F7/20

    CPC classification number: G03F7/705 ,  G03F1/36 ,  G03F7/70441

    Abstract: PROBLEM TO BE SOLVED: To provide a fast and high-performance projection optics simulation method and system with a non-scalar (i.e. "non-Hopkins") effect taken into account. SOLUTION: A generalized bilinear kernel independent of a mask transmission function is formed to include various influences, and the kernel is processed by decomposition to compute an image including a non-scalar effect. Dominant eigenfunctions of the generalized bilinear kernel can be used to previously compute a convolution with possible polygon sectors. Then a mask transmission function can be decomposed into polygon sectors, and a weighted pre-image may be formed from a coherent sum of the pre-computed convolution for appropriate mask polygon sectors. The image at a point may be formed from the incoherent sum of the weighted pre-images over all of the dominant eigenfunctions of the generalized bilinear kernel. The resulting image can be used to perform MBOPC (model-based optical proximity correction). COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：提供考虑到非标量（即“非霍普金斯”）效应的快速和高性能的投影光学模拟方法和系统。 解决方案：形成独立于掩模传输功能的广义双线性内核以包含各种影响，并且通过分解处理内核以计算包括非标量效应的图像。 广义双线性核的主要本征函数可用于预先计算可能的多边形扇区的卷积。 然后，掩模传输功能可以被分解成多边形扇区，并且可以从针对适当的屏蔽多边形扇区的预先计算的卷积的相干和形成加权的预先图像。 一点上的图像可以由广义双线性核的所有主要特征函数上的加权预图像的非相干和形成。 所得到的图像可用于执行MBOPC（基于模型的光学邻近校正）。 版权所有（C）2005，JPO＆NCIPI

    Renesting interaction map into design for efficient long range calculation
    10.
    发明专利
    Renesting interaction map into design for efficient long range calculation 有权
    将交互地图重新设计成有效的长距离计算

    公开(公告)号：JP2005128553A

    公开(公告)日：2005-05-19

    申请号：JP2004309697

    申请日：2004-10-25

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： GALLATIN GREGG M ,  GOFMAN EMANUEL ,  LAI KAFAI ,  MARK A RABIN ,  MUKHERJEE MAHARAJ ,  RAMM DOV ,  ROSENBLUTH ALAN E ,  SHLAFMAN SHLOMO

    IPC: G03F1/08 ,  G03F1/14 ,  G03F7/20 ,  G06F17/50 ,  H01L21/027 ,  H01L21/82

    CPC classification number: G03F1/36 ,  G03F1/68 ,  G06F17/5068

    Abstract: PROBLEM TO BE SOLVED: To provide a method for performing model-based photolithography correction by partitioning a cell array layout having a plurality of polygons into a plurality of cells covering the layout, and to provide a program storage device.
    SOLUTION: The layout is representative of a desired design data hierarchy. A density map is generated corresponding to interactions between the polygons and the plurality of cells, and then the densities within each cell are convolved. An interaction map is formed by using the convolved densities, followed by truncating the interaction map to form a map of truncated cells. Substantially identical groupings of the truncated cells are segregated respectively into differing ones of a plurality of buckets. Each bucket contains a single set of identical groupings of truncated cells. A hierarchal arrangement is generated using the buckets, and the desired design data hierarchy is performed by using the hierarchal arrangement to ultimately correct for photolithography.
    COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种通过将具有多个多边形的单元阵列布局分割成覆盖布局的多个单元来执行基于模型的光刻校正的方法，并且提供程序存储装置。

    解决方案：布局代表所需的设计数据层次结构。 生成对应于多边形与多个单元之间的相互作用的密度图，然后卷积每个单元内的密度。 通过使用卷积密度形成交互图，随后截断交互图以形成截断单元格的图。 截短的细胞的基本相同的分组分别分离成多个桶中的不同的桶。 每个桶包含一组相同的截断单元组。 使用桶来生成层级布置，并且通过使用层级布置来执行期望的设计数据层次结构以最终校正光刻。 版权所有（C）2005，JPO＆NCIPI

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