公开(公告)号：US3796882A

公开(公告)日：1974-03-12

申请号：US3796882D

申请日：1972-05-08

Applicant: IBM

Inventor： CAHILL J ,  SHARMA B ,  VAN DER MEULEN Y

IPC: H01L21/38 ,  H01L21/00 ,  H01L21/365 ,  H01L31/10 ,  H01L31/109 ,  H01J39/12

CPC classification number: H01L31/109 ,  H01L21/00

Abstract: It is desirable to provide photodiodes that can be manufactured at low temperatures ( OR = 1cm2), produce a photocurrent that is linearly responsive to photon flux, have low dark sensitivity and high light sensitivity, a low optimum operating voltage of * 1.5 volts and relatively fast rise and decay times of the order of 3 microseconds. A silicon-cadmium selenide p-n heterojunction has been found to have the above noted desirable characteristics.