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公开(公告)号:US3796882A
公开(公告)日:1974-03-12
申请号:US3796882D
申请日:1972-05-08
Applicant: IBM
Inventor: CAHILL J , SHARMA B , VAN DER MEULEN Y
IPC: H01L21/38 , H01L21/00 , H01L21/365 , H01L31/10 , H01L31/109 , H01J39/12
CPC classification number: H01L31/109 , H01L21/00
Abstract: It is desirable to provide photodiodes that can be manufactured at low temperatures ( OR = 1cm2), produce a photocurrent that is linearly responsive to photon flux, have low dark sensitivity and high light sensitivity, a low optimum operating voltage of * 1.5 volts and relatively fast rise and decay times of the order of 3 microseconds. A silicon-cadmium selenide p-n heterojunction has been found to have the above noted desirable characteristics.
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公开(公告)号:DE69422935T2
公开(公告)日:2000-08-17
申请号:DE69422935
申请日:1994-06-30
Applicant: IBM
Inventor: DOERINGER WILLIBALD , DYKEMAN DOUGLAS , KARJOTH GUENTER , NASSEHI MEHDI , SHARMA B
Abstract: PCT No. PCT/EP94/02135 Sec. 371 Date Dec. 17, 1996 Sec. 102(e) Date Dec. 17, 1996 PCT Filed Jun. 30, 1994 PCT Pub. No. WO96/00945 PCT Pub. Date Jan. 11, 1996The building, maintenance, and use of a database is described having a trie-like structure for storing entries and retrieving an at least partial match, preferably the longest partial match, or all partial matches of a search argument (input key) from said entries, said database having nodes (20), with each node containing first link information (21) leading to at least one previous node (parent pointer) and second link information (25,26) leading to at least one following node (child pointer), at least a stored key (entry, 23, 24), or a combination, thereof. The particular structure of the nodes allows a two-step search process, in which segments of a search argument are firstly used to determine a search path through the trie-like database, said search path being backtracked in the second part of the search. During the second part of the search the entire search argument is compared to entries stored in the nodes until a match is found. The described database allows an efficient use of memories and is advantageously applied to fast data retrieval, in particular related to communication within computer networks. No recursive procedures are applied.
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公开(公告)号:DE69422935D1
公开(公告)日:2000-03-09
申请号:DE69422935
申请日:1994-06-30
Applicant: IBM
Inventor: DOERINGER WILLIBALD , DYKEMAN DOUGLAS , KARJOTH GUENTER , NASSEHI MEHDI , SHARMA B
Abstract: PCT No. PCT/EP94/02135 Sec. 371 Date Dec. 17, 1996 Sec. 102(e) Date Dec. 17, 1996 PCT Filed Jun. 30, 1994 PCT Pub. No. WO96/00945 PCT Pub. Date Jan. 11, 1996The building, maintenance, and use of a database is described having a trie-like structure for storing entries and retrieving an at least partial match, preferably the longest partial match, or all partial matches of a search argument (input key) from said entries, said database having nodes (20), with each node containing first link information (21) leading to at least one previous node (parent pointer) and second link information (25,26) leading to at least one following node (child pointer), at least a stored key (entry, 23, 24), or a combination, thereof. The particular structure of the nodes allows a two-step search process, in which segments of a search argument are firstly used to determine a search path through the trie-like database, said search path being backtracked in the second part of the search. During the second part of the search the entire search argument is compared to entries stored in the nodes until a match is found. The described database allows an efficient use of memories and is advantageously applied to fast data retrieval, in particular related to communication within computer networks. No recursive procedures are applied.
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公开(公告)号:BR7806882A
公开(公告)日:1979-07-17
申请号:BR7806882
申请日:1978-10-18
Applicant: IBM
Abstract: This invention is concerned with a process for bonding a durable low surface energy polymeric coating to a metal or oxide surface. The metal or oxide surface is first treated with an alkali, thereby maximizing the hydroxide ion concentration on the surface, and then in a rigorously dry state with a rigorously dry fluorinated material to form the polymeric coating. The fluorinated material has the formula Rf - O - (CH2)n - SiX3 wherein Rf is a fluorinated lower alkyl group, n is an integer from 2 to 10, and X is a halogen, cyanide or alkoxy group.
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