公开(公告)号：JPH11261026A

公开(公告)日：1999-09-24

申请号：JP894399

申请日：1999-01-18

Applicant: IBM

Inventor： CANALE ANTHONY J ,  CRONIN JOHN E

IPC: H01L27/108 ,  H01L21/8242

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming a semiconductor trench capacitor cell having a buried strap. SOLUTION: A substrate has a trench having conductors 28 and 34 separated from a trench wall by dielectric materials 26 and 30. One part of the material 30 is removed from the top surface of the conductor 34 to the low level of the conductor 34 and at least one part of a space formed, in such a way, is filled with a diffusible material 42. The conductor 34, the wall 32 and the material 42 are subjected to annealing to diffuse conductive elements from the wall and the conductors into the material 42, whereby a buried strap 42 is formed.