公开(公告)号：GB1088679A

公开(公告)日：1967-10-25

申请号：GB5183464

申请日：1964-12-21

Applicant: IBM

Inventor： AMES IRVING ,  CASWELL HOLLIS LELAND

IPC: H01L21/316 ,  H01L21/3205 ,  H01L23/485 ,  H01L23/532

Abstract: 1,088,679. Semi-conductor device. INTERNATIONAL BUSINESS MACHINES CORPORATION. Dec. 21, 1964 [Dec. 26, 1963], No. 51834/64. Heading H1K. The connections to the electrodes of a semiconductor device are produced by depositing a first aluminium oxide layer on the substrate, depositing a conductive pattern, of a material having a similar coefficient-of expansion to that of silicon oxide, to make contact with the device, and depositing a second layer of aluminium oxide over the conductive pattern. As shown the electrodes of a transistor or diode 12 diffused into a silicon substrate 10 are contacted by depositing an aluminium oxide layer 14 over the entire surface except the contact regions, and depositing a contact strip 16 of tungsten or molybdenum over the layer A small region 22 of aluminium oxide is deposited across the first strip and a conductive strip 20 is deposited over this to form an insulated crossing. Both conductive strips are then protected with a further aluminium oxide layer 24. The end portion 18 of conductive strip 16 is left exposed to allow external connections to be made by soldering or by a pressure contact. The aluminium oxide layers may be produced by vapour deposition of aluminium in a high oxygen partial pressure, by thermal evaporation produced by electron bombardment heating of Al 2 O 3 , or by reactive sputtering of aluminium in an oxygen atmosphere. The conductive strips may be deposited by sputtering or thermal evaporation. Reference has been directed by the Comptroller to Specification 900,334.

公开(公告)号：DE1230285B

公开(公告)日：1966-12-08

申请号：DEJ0020594

申请日：1961-09-29

Applicant: IBM

Inventor： CASWELL HOLLIS LELAND

IPC: C23C14/04 ,  H01B1/00 ,  H01L39/00

Abstract: In a method of vacuum evaporation of thin films on a substrate, the pressure of all the gases within the system is reduced to a value within the range 10-5 to 10-6 mm. Hg. and the partial pressure of selected ones of the gases is then reduced to values below the above range and the material is subsequently evaporated on to the substrate. The partial pressures of oxygen may be lowered by using a Ti getter, of water vapour by baking the apparatus and by use of a liquid nitrogen trap which latter also removes CO2. Examples refer to the evaporation of tin and indium (possibly through a mask).