公开(公告)号：JPS62160743A

公开(公告)日：1987-07-16

申请号：JP195287

申请日：1987-01-09

Applicant: INTEL CORP ,  IBM

Inventor： CHAMBERS STEPHEN T ,  LUCE STEPHEN E

IPC: H01L21/28 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768

公开(公告)号：DE3684298D1

公开(公告)日：1992-04-16

申请号：DE3684298

申请日：1986-12-09

Applicant: IBM

Inventor： CHAMBERS STEPHEN T ,  LUCE STEPHEN E

IPC: H01L21/28 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/60

Abstract: A method for forming contact openings (19) in semiconductor devices. A borosilicate glass layer (13) is deposited over the gate and drain area (14, 11) of a device, followed by a borophosphosilicate glass layer (15). After masking with photoresist (16) and defining openings (17) the borophosphosilicate glass (15) is isotropically etched to undercut the resist layer (16). A plasma etch is utilized to anisotropically etch the borosilicate glass layer (13) and expose the surface of the drain area (11). After the photoresist (16) is stripped away, a reflow step is employed to reduce the sharp edges of the glass layer and result in a sloped contact opening profile. Good metal coverage is achieved while maintaining isolation of the gate (14).