公开(公告)号：DE3689393D1

公开(公告)日：1994-01-27

申请号：DE3689393

申请日：1986-07-22

Applicant: IBM

Inventor： CHANG LEROY LI-GONG ,  ESAKI LEO

IPC: H01L29/812 ,  H01L21/20 ,  H01L21/338 ,  H01L27/00 ,  H01L29/06 ,  H01L29/12 ,  H01L29/15 ,  H01L29/775 ,  H01L29/778 ,  H01L29/80 ,  H01L29/14 ,  H01L29/76 ,  H01L29/205

Abstract: A semiconductor superlattice (1) is provided with a one-dimensional carrier path (a) at the intersection of low energy level layers (5, 7) of the superlattice. A group of layers in a first crystallographic direction (Y) comprises a low energy level layer (5) bounded by two higher energy level layers (4, 6). A series of layers in a second crystallographic direction (2) different from the first comprises a lower energy level layer (7) immediately adjacent the layers of the group of layers (4, 5, 6). The lower energy layer is bounded by a higher energy level layer (8). The low and higher energy level layers can be formed of Ga 1-x Al x A s where x is larger for higher energy level layers. The lower energy level layer can be formed from GaAs of 10nm thickness. Conductivity modulation through an adjacent exposed surface (11) can then be employed for controlling electron and hole movement in the path to define a quantum pipeline carrier path. Control and contacting electrodes may be positioned on the exposed surfaces.

公开(公告)号：DE3689393T2

公开(公告)日：1994-06-23

申请号：DE3689393

申请日：1986-07-22

Applicant: IBM

Inventor： CHANG LEROY LI-GONG ,  ESAKI LEO

IPC: H01L29/812 ,  H01L21/20 ,  H01L21/338 ,  H01L27/00 ,  H01L29/06 ,  H01L29/12 ,  H01L29/15 ,  H01L29/775 ,  H01L29/778 ,  H01L29/80 ,  H01L29/14 ,  H01L29/76 ,  H01L29/205

Abstract: A semiconductor superlattice (1) is provided with a one-dimensional carrier path (a) at the intersection of low energy level layers (5, 7) of the superlattice. A group of layers in a first crystallographic direction (Y) comprises a low energy level layer (5) bounded by two higher energy level layers (4, 6). A series of layers in a second crystallographic direction (2) different from the first comprises a lower energy level layer (7) immediately adjacent the layers of the group of layers (4, 5, 6). The lower energy layer is bounded by a higher energy level layer (8). The low and higher energy level layers can be formed of Ga 1-x Al x A s where x is larger for higher energy level layers. The lower energy level layer can be formed from GaAs of 10nm thickness. Conductivity modulation through an adjacent exposed surface (11) can then be employed for controlling electron and hole movement in the path to define a quantum pipeline carrier path. Control and contacting electrodes may be positioned on the exposed surfaces.

公开(公告)号：DE3480679D1

公开(公告)日：1990-01-11

申请号：DE3480679

申请日：1984-01-26

Applicant: IBM

Inventor： CHANG LEROY LI-GONG ,  FANG FRANK FU

IPC: H01L31/107 ,  H01L31/109 ,  H01L31/10

Abstract: There is an abrupt change in band gap in each of the interface regions (9, 10, 11 and 12) between a series of light absorbing regions (2, 3, 4, 5 and 6) of a monocrystalline semiconductor body. The band gap decreases progressively with distance from the light incident surface of the body and the major part of the change in band gap within each of the interface regions is in the band favouring a particular type of carrier. The interface regions are narrower than the carrier mean free path so as to provide kinetic energy for efficient carrier multiplication with reduced noise as the carriers pass through the semiconductor body.