公开(公告)号：DE3173446D1

公开(公告)日：1986-02-20

申请号：DE3173446

申请日：1981-09-09

Applicant: IBM

Inventor： FANG FRANK FU ,  SAI-HALASZ GEORGE ANTHONY

IPC: H01L27/092 ,  H01L21/8238 ,  H01L27/12 ,  H01L29/10 ,  H01L29/772 ,  H01L29/78 ,  H01L29/786

公开(公告)号：DE2756915A1

公开(公告)日：1978-07-06

申请号：DE2756915

申请日：1977-12-21

Applicant: IBM

Inventor： FANG FRANK FU ,  YU HWA NIEN

IPC: G11C11/401 ,  G11C16/04 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/78 ,  H01L31/00 ,  G11C17/00

公开(公告)号：AU1249876A

公开(公告)日：1977-10-06

申请号：AU1249876

申请日：1976-03-30

Applicant: IBM

Inventor： FANG FRANK FU ,  HERRELL DENNIS JAMES

IPC: H01L39/22 ,  H02M7/21 ,  H03K17/92 ,  H03K19/195 ,  H03K17/16

公开(公告)号：CA778031A

公开(公告)日：1968-02-06

申请号：CA778031D

Applicant: IBM

Inventor： FANG FRANK FU

公开(公告)号：DE3480679D1

公开(公告)日：1990-01-11

申请号：DE3480679

申请日：1984-01-26

Applicant: IBM

Inventor： CHANG LEROY LI-GONG ,  FANG FRANK FU

IPC: H01L31/107 ,  H01L31/109 ,  H01L31/10

Abstract: There is an abrupt change in band gap in each of the interface regions (9, 10, 11 and 12) between a series of light absorbing regions (2, 3, 4, 5 and 6) of a monocrystalline semiconductor body. The band gap decreases progressively with distance from the light incident surface of the body and the major part of the change in band gap within each of the interface regions is in the band favouring a particular type of carrier. The interface regions are narrower than the carrier mean free path so as to provide kinetic energy for efficient carrier multiplication with reduced noise as the carriers pass through the semiconductor body.

公开(公告)号：DE3163572D1

公开(公告)日：1984-06-20

申请号：DE3163572

申请日：1981-02-25

Applicant: IBM

Inventor： FANG FRANK FU ,  SAI-HALASZ GEORGE ANTHONY

IPC: H01L21/331 ,  H01L29/205 ,  H01L29/73 ,  H01L29/737 ,  H01L29/80 ,  H01L29/72

Abstract: A semiconductor inversion layer transistor which is compatible with semiconductor fabrication technology, and an integrated circuit which incorporates a plurality of such transistors. In one embodiment of the transistor, a P type indium arsenide base and a P type gallium antimonide emitter are used while the collector can be made of either P type gallium antimonide or N type indium arsenide. By the nature of the band alignment at the interface, the indium arsenide base has its Fermi level pinned in the conduction ban at the base-emitter junction and an assymetrically conducting charge barrier which is formed at this junction is preferential to injection of carriers flowing from the emitter to the base rather than vice versa. When the base-emitter junction is forward biased the electrons at the junction are projected across the base with minimal hole injection from base to emitter, thus providing a high gain transistor having excellent high frequency characteristics.

公开(公告)号：DE2728360A1

公开(公告)日：1978-01-05

申请号：DE2728360

申请日：1977-06-23

Applicant: IBM

Inventor： DOO VEN YOUNG ,  FANG FRANK FU

IPC: H05K3/46 ,  H01L21/98 ,  H01L23/02 ,  H01L23/04 ,  H01L23/538 ,  H01L25/065 ,  H02G3/16 ,  H05K3/36 ,  H01L23/50

公开(公告)号：DE2536272A1

公开(公告)日：1976-07-08

申请号：DE2536272

申请日：1975-08-14

Applicant: IBM

Inventor： FANG FRANK FU

IPC: H03M1/12 ,  G11C11/44 ,  G11C27/02 ,  H01L39/22 ,  H03K7/02 ,  H03M1/00

Abstract: An analog waveform transducing circuit is disclosed which includes a pair of superconductive circuits connected in parallel between a pair of terminals. One of these circuits includes a Josephson tunnelling device and the other includes inductance (which may be distributed) which is greater than the inductance of the Josephson device. An analog signal is applied to one of said terminals. Means are provided for switching said Josephson device between normal and superconductive states to thereby trap one or more flux quanta. An output means is coupled to one of the two circuits.

公开(公告)号：CA846994A

公开(公告)日：1970-07-14

申请号：CA846994D

Applicant: IBM

Inventor： FANG FRANK FU ,  YU HWA NIEN ,  YEH TSU-HSING

公开(公告)号：DE3567320D1

公开(公告)日：1989-02-09

申请号：DE3567320

申请日：1985-06-13

Applicant: IBM

Inventor： FANG FRANK FU ,  GROSSMAN BERTRAND M ,  HWANG WEI

IPC: H01L29/78 ,  H01L21/033 ,  H01L21/265 ,  H01L21/28 ,  H01L21/336 ,  H01L29/423 ,  H01L21/00

Abstract: A semiconductor device, particularly an ultra-short gate MOSFET, is formed by depositing a mask (6) at a low angle with respect to a planar surface and then performing an angular conductivity conversion operation, such as ion implantation, so that the converted region extends (9) partially under the mask. The mask is then removed and a gate electrode (12) is deposited in its place, the gate being smaller than the channel length (11) from the source (7) to the point (9) where the conversion extended under the mask. Straggle location change is accommodated by arranging that the mask has a dimension along a line parallel to the planar surface which is greater than the desired channel length.